UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor

Sheng Xue Yang; Jian Gong; Jing Bo Li; Jian Bai Xia

doi:10.3788/fgxb20133411.1413

UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor

Sheng Xue Yang
, Jian Gong
, Jing Bo Li^*
, Jian Bai Xia

^*Corresponding author for this work

CAS - Institute of Semiconductors
Northeast Normal University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A photoresponsive sensor that UV light controlled depletion zone thickness was report. This p-n junction depletion zone lies between the n-type ZnS and p-type polyaniline. The photoresponsive sensors were constructed by combining polyaniline/ZnS p-n heterojunction and ZnO nanorods. Different from the traditional photosensitive nanomaterials whose conductivity increases with UV illumination intensity, the conductivity of the photoresponsive sensor studied in this articles decreased when the UV light was turned on.

Original language	English
Pages (from-to)	1413-1418
Number of pages	6
Journal	Chinese Journal of Luminescence
Volume	34
Issue number	11
DOIs	https://doi.org/10.3788/fgxb20133411.1413
State	Published - Nov 2013
Externally published	Yes

Keywords

Metal sulfide
P-n junction
Photoresponsive sensor
Polyaniline
UV light controllable

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10.3788/fgxb20133411.1413

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title = "UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor",

abstract = "A photoresponsive sensor that UV light controlled depletion zone thickness was report. This p-n junction depletion zone lies between the n-type ZnS and p-type polyaniline. The photoresponsive sensors were constructed by combining polyaniline/ZnS p-n heterojunction and ZnO nanorods. Different from the traditional photosensitive nanomaterials whose conductivity increases with UV illumination intensity, the conductivity of the photoresponsive sensor studied in this articles decreased when the UV light was turned on.",

keywords = "Metal sulfide, P-n junction, Photoresponsive sensor, Polyaniline, UV light controllable",

author = "Yang, \{Sheng Xue\} and Jian Gong and Li, \{Jing Bo\} and Xia, \{Jian Bai\}",

year = "2013",

month = nov,

doi = "10.3788/fgxb20133411.1413",

language = "英语",

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T1 - UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor

AU - Yang, Sheng Xue

AU - Gong, Jian

AU - Li, Jing Bo

AU - Xia, Jian Bai

PY - 2013/11

Y1 - 2013/11

N2 - A photoresponsive sensor that UV light controlled depletion zone thickness was report. This p-n junction depletion zone lies between the n-type ZnS and p-type polyaniline. The photoresponsive sensors were constructed by combining polyaniline/ZnS p-n heterojunction and ZnO nanorods. Different from the traditional photosensitive nanomaterials whose conductivity increases with UV illumination intensity, the conductivity of the photoresponsive sensor studied in this articles decreased when the UV light was turned on.

AB - A photoresponsive sensor that UV light controlled depletion zone thickness was report. This p-n junction depletion zone lies between the n-type ZnS and p-type polyaniline. The photoresponsive sensors were constructed by combining polyaniline/ZnS p-n heterojunction and ZnO nanorods. Different from the traditional photosensitive nanomaterials whose conductivity increases with UV illumination intensity, the conductivity of the photoresponsive sensor studied in this articles decreased when the UV light was turned on.

KW - Metal sulfide

KW - P-n junction

KW - Photoresponsive sensor

KW - Polyaniline

KW - UV light controllable

UR - https://www.scopus.com/pages/publications/84891305805

U2 - 10.3788/fgxb20133411.1413

DO - 10.3788/fgxb20133411.1413

M3 - 文章

AN - SCOPUS:84891305805

SN - 1000-7032

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SP - 1413

EP - 1418

JO - Chinese Journal of Luminescence

JF - Chinese Journal of Luminescence

IS - 11

ER -

UV light controllable depletion zone of metal sulfide/ polyaniline p-n junction and its application in a photoresponsive sensor

Abstract

Keywords

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