Unwanted turn-on of SiC JFET bi-directional switches under influence of parasitic parameters

  • Lina Wang
  • , Xiangcai Zhang
  • , Jie Deng
  • , Junyi Yang
  • , Olanrewaju Kabir Oladele
  • , Yue Zhao

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

SiC JFET bi-directional switches (BDS) are widely used in construction of matrix converters, multi-level converters, solid state switches, etc. In this research work, the phenomenon of unwanted turn-on (UTO) of SiC JFET-based BDS and its related constant envelop oscillation is investigated. This phenomenon is critical to power conversion systems' stability and reliability. Firstly, the roots of UTO are investigated by probing into the gate drive circuits, some theoretical analysis on the unique configuration of BDS is presented. Then some methods for mitigating the UTO behavior and constant envelop oscillation are proposed. Finally, the effectiveness of the proposed methods is verified by the experimental results.

Original languageEnglish
Title of host publicationProceedings IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages4194-4199
Number of pages6
ISBN (Electronic)9781538611272
DOIs
StatePublished - 15 Dec 2017
Event43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017 - Beijing, China
Duration: 29 Oct 20171 Nov 2017

Publication series

NameProceedings IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society
Volume2017-January

Conference

Conference43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017
Country/TerritoryChina
CityBeijing
Period29/10/171/11/17

Keywords

  • SiC JFET
  • bi-directional switch
  • constant envelop oscillation
  • direct-drive technology
  • unwanted turn-on

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