Ultraviolet (340-390 nm), room temperature, photoluminescence from InAs nanocrystals embedded in SiO2 matrix

Jianzhong Shi; Kaigui Zhu; Qingqi Zheng; Lide Zhang; Ling Ye; Jianxin Wu; Jian Zuo

doi:10.1063/1.118926

Ultraviolet (340-390 nm), room temperature, photoluminescence from InAs nanocrystals embedded in SiO₂ matrix

Jianzhong Shi^*
, Kaigui Zhu
, Qingqi Zheng
, Lide Zhang
, Ling Ye
, Jianxin Wu
, Jian Zuo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

InAs nanocrystals embedded in SiO₂ matrix have been fabricated by a radio-frequency magnetron co-sputtering technique without postannealing. X-ray photoelectron spectra and Raman spectroscopy strongly suggest the existence of InAs nanocrystals in the SiO₂ matrix. From the optical absorption spectrum, the absorption edge exhibits a very large blueshift of 3.3 eV with respect to that of bulk InAs. The double-peak ultraviolet photoluminescence is observed. Our experimental results show that this double-peak phenomenon originates from the radiative recombination of the quantum-confined electron-heavy hole excitons and electron-split-off hole excitons.

Original language	English
Pages (from-to)	2586-2588
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	19
DOIs	https://doi.org/10.1063/1.118926
State	Published - 12 May 1997
Externally published	Yes

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title = "Ultraviolet (340-390 nm), room temperature, photoluminescence from InAs nanocrystals embedded in SiO2 matrix",

abstract = "InAs nanocrystals embedded in SiO2 matrix have been fabricated by a radio-frequency magnetron co-sputtering technique without postannealing. X-ray photoelectron spectra and Raman spectroscopy strongly suggest the existence of InAs nanocrystals in the SiO2 matrix. From the optical absorption spectrum, the absorption edge exhibits a very large blueshift of 3.3 eV with respect to that of bulk InAs. The double-peak ultraviolet photoluminescence is observed. Our experimental results show that this double-peak phenomenon originates from the radiative recombination of the quantum-confined electron-heavy hole excitons and electron-split-off hole excitons.",

author = "Jianzhong Shi and Kaigui Zhu and Qingqi Zheng and Lide Zhang and Ling Ye and Jianxin Wu and Jian Zuo",

year = "1997",

month = may,

day = "12",

doi = "10.1063/1.118926",

language = "英语",

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journal = "Applied Physics Letters",

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T1 - Ultraviolet (340-390 nm), room temperature, photoluminescence from InAs nanocrystals embedded in SiO2 matrix

AU - Shi, Jianzhong

AU - Zhu, Kaigui

AU - Zheng, Qingqi

AU - Zhang, Lide

AU - Ye, Ling

AU - Wu, Jianxin

AU - Zuo, Jian

PY - 1997/5/12

Y1 - 1997/5/12

N2 - InAs nanocrystals embedded in SiO2 matrix have been fabricated by a radio-frequency magnetron co-sputtering technique without postannealing. X-ray photoelectron spectra and Raman spectroscopy strongly suggest the existence of InAs nanocrystals in the SiO2 matrix. From the optical absorption spectrum, the absorption edge exhibits a very large blueshift of 3.3 eV with respect to that of bulk InAs. The double-peak ultraviolet photoluminescence is observed. Our experimental results show that this double-peak phenomenon originates from the radiative recombination of the quantum-confined electron-heavy hole excitons and electron-split-off hole excitons.

AB - InAs nanocrystals embedded in SiO2 matrix have been fabricated by a radio-frequency magnetron co-sputtering technique without postannealing. X-ray photoelectron spectra and Raman spectroscopy strongly suggest the existence of InAs nanocrystals in the SiO2 matrix. From the optical absorption spectrum, the absorption edge exhibits a very large blueshift of 3.3 eV with respect to that of bulk InAs. The double-peak ultraviolet photoluminescence is observed. Our experimental results show that this double-peak phenomenon originates from the radiative recombination of the quantum-confined electron-heavy hole excitons and electron-split-off hole excitons.

UR - https://www.scopus.com/pages/publications/0000331229

U2 - 10.1063/1.118926

DO - 10.1063/1.118926

M3 - 文章

AN - SCOPUS:0000331229

SN - 0003-6951

VL - 70

SP - 2586

EP - 2588

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Ultraviolet (340-390 nm), room temperature, photoluminescence from InAs nanocrystals embedded in SiO₂ matrix

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