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Ultrastrong Boron Frameworks in ZrB12: A Highway for Electron Conducting

  • Teng Ma
  • , Hui Li
  • , Xu Zheng
  • , Shanmin Wang
  • , Xiancheng Wang
  • , Huaizhou Zhao
  • , Songbai Han
  • , Jian Liu
  • , Ruifeng Zhang*
  • , Pinwen Zhu
  • , Youwen Long
  • , Jinguang Cheng
  • , Yanming Ma
  • , Yusheng Zhao
  • , Changqing Jin
  • , Xiaohui Yu
  • *Corresponding author for this work
  • CAS - Institute of Physics
  • Jilin University
  • Southern University of Science and Technology
  • China National Nuclear Corporation
  • Collaborative Innovation Center of Quantum Matter

Research output: Contribution to journalArticlepeer-review

Abstract

The elastic/plastic and electronic properties of single crystal and polycrystal ZrB12 have been studied by experiments and first principle simulations. Under the load of 0.25 and 0.49 N, the Vickers hardness of polycrystalline ZrB12 exceeds 40 GPa, suggesting the very hard property at small load. Under the load of 4.9 N, the measured Vickers hardness decreases and saturates at =27.0 GPa, which is slightly higher than the well-known ReB2, WB3. Revealed by first principle simulations, the ideal shear strength of ZrB12 can be as high as 34.5 GP because the frameworks are constructed with very high symmetrical B-B clusters. In addition to the high strength, ZrB12 also exhibits superior metallic behavior with ultralow electrical resistivity =18 μω.cm, and Seebeck coefficient =2.0 μV.K-1 (RT) both of which are comparable to that of Pt. First principle simulations show that the extensive B-B covalent network in ZrB12 can form delocalized π-bonds, which generate extensive conducting channels for valence electrons by contacting Zr 4d orbitals.

Original languageEnglish
Article number1604003
JournalAdvanced Materials
Volume29
Issue number3
DOIs
StatePublished - Jan 2017

Keywords

  • 3D boron frameworks
  • delocalized π-bonds
  • metallic electric resistivity

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