Ultrafast growth of single-crystalline Si nanowires

  • J. B. Chang
  • , J. Z. Liu
  • , P. X. Yan*
  • , L. F. Bai
  • , Z. J. Yan
  • , X. M. Yuan
  • , Q. Yang
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Silicon nanowires (SiNWs) have been catalytically synthesized by heat treatment of Si nanopowder at 980 °C. The SiNWs comprise crystalline Si nanoparticles interconnected with metal catalyst. The formation mechanism of nanowires generally depends on the presence of Fe catalysts in the synthesis process of solid-liquid-solid (SLS). Although gas phase of vapor-liquid-solid (VLS) method can be used to produce various of different nanowire materials, growth model based on the SLS mechanism by heat treatment is more ascendant for providing ultrafast growth of single-crystalline Si nanowires and controlling the diameter of them easily. The growth of single-crystalline SiNWs and morphology were discussed.

Original languageEnglish
Pages (from-to)2125-2128
Number of pages4
JournalMaterials Letters
Volume60
Issue number17-18
DOIs
StatePublished - Aug 2006
Externally publishedYes

Keywords

  • SiNWs

Fingerprint

Dive into the research topics of 'Ultrafast growth of single-crystalline Si nanowires'. Together they form a unique fingerprint.

Cite this