@inproceedings{b98bb9fe9be54fbb90e7e64d9e4daa80,
title = "Ultra-low power consumption spintronics devices",
abstract = "Spintronics devices has attracted considerable interest and attention, especially for the magnetic random-access memories (MRAMs), which have high reliability, low power consumption and fast operation speed. Remarkable progress in innovative materials and new circuits structures in spintronics have been witnessed. This paper reviews our researches of ultra-low power consumption spintronics devices reported in recent years. Both the highly efficient spin transfer torque (STT) MRAM and the filed-free spin orbit torque (SOT) MRAM are discussed. Based on these spintronics devices, the NAND-like spintronics memory (NAND-SPIN) structure and in-memory processing method give the potential solutions for next generation integrated circuits.",
author = "Zongxia Guo and Kaihua Cao and Kewen Shi and Weisheng Zhao",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 13th IEEE International Conference on ASIC, ASICON 2019 ; Conference date: 29-10-2019 Through 01-11-2019",
year = "2019",
month = oct,
doi = "10.1109/ASICON47005.2019.8983564",
language = "英语",
series = "Proceedings of International Conference on ASIC",
publisher = "IEEE Computer Society",
editor = "Fan Ye and Ting-Ao Tang",
booktitle = "Proceedings - 2019 IEEE 13th International Conference on ASIC, ASICON 2019",
address = "美国",
}