TY - GEN
T1 - ULTRA-FAR-FIELD HIGH-RESOLUTION NANOPATTERNING ON MONOCRYSTALLINE SILICON USING A 3AXICON-LENS OPTICAL SYSTEM
AU - Liu, Yaoyu
AU - Guan, Yingchun
AU - Zhang, Zhen
N1 - Publisher Copyright:
Copyright © 2025 by ASME.
PY - 2025
Y1 - 2025
N2 - Precise nanopatterning is increasingly critical for advanced micro- and nanofabrication. However, conventional laser-based techniques are often constrained by optical diffraction and require complex, high-numerical-aperture (NA) optics. Laser-induced periodic surface structures (LIPSS) offer an alternative approach, but their intrinsic periodicity and nonuniformity limit the production of uniform, isolated nanoscale features. Here, we report a novel nanopatterning method using a 1030 nm linearly polarized femtosecond laser integrated with a 3Axicon-Lens optical system and galvanometer scanning. This configuration enables ultra-far-field processing (working distance > 85 nm), generating independent, uniform nanopatterns on monocrystalline silicon surfaces. We demonstrate isolated features down to 100 nm, representing the first sub-100 nm patterning on a semiconductor via galvanometer scanning without the use of high-NA objectives or microsphere lenses. These results highlight the enhanced flexibility and scalability of this technique for semiconductor manufacturing, MEMS, and photonics applications.
AB - Precise nanopatterning is increasingly critical for advanced micro- and nanofabrication. However, conventional laser-based techniques are often constrained by optical diffraction and require complex, high-numerical-aperture (NA) optics. Laser-induced periodic surface structures (LIPSS) offer an alternative approach, but their intrinsic periodicity and nonuniformity limit the production of uniform, isolated nanoscale features. Here, we report a novel nanopatterning method using a 1030 nm linearly polarized femtosecond laser integrated with a 3Axicon-Lens optical system and galvanometer scanning. This configuration enables ultra-far-field processing (working distance > 85 nm), generating independent, uniform nanopatterns on monocrystalline silicon surfaces. We demonstrate isolated features down to 100 nm, representing the first sub-100 nm patterning on a semiconductor via galvanometer scanning without the use of high-NA objectives or microsphere lenses. These results highlight the enhanced flexibility and scalability of this technique for semiconductor manufacturing, MEMS, and photonics applications.
KW - Bessel beam optics
KW - Femtosecond laser
KW - Laser-induced periodic surface structures (LIPSS)
KW - Nanopatterning
KW - Ultra-far-field focusing
UR - https://www.scopus.com/pages/publications/105024067350
U2 - 10.1115/DETC2025-167983
DO - 10.1115/DETC2025-167983
M3 - 会议稿件
AN - SCOPUS:105024067350
T3 - Proceedings of the ASME Design Engineering Technical Conference
BT - 21st IEEE/ASME International Conference on Mechatronic and Embedded Systems and Applications (MESA); 49th Mechanisms and Robotics Conference (MR)
PB - American Society of Mechanical Engineers (ASME)
T2 - ASME 2025 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference, IDETC-CIE 2025
Y2 - 17 August 2025 through 20 August 2025
ER -