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Two-stage Hall-Petch relationship in Cu with recrystallized structure

  • Y. Z. Tian*
  • , Y. P. Ren
  • , S. Gao
  • , R. X. Zheng
  • , J. H. Wang
  • , H. C. Pan
  • , Z. F. Zhang
  • , N. Tsuji
  • , G. W. Qin
  • *Corresponding author for this work
  • Northeastern University China
  • Kyoto University
  • State Grid Urban and Rural Electric Power Design Research (Beijing) Co. Ltd
  • CAS - Institute of Metal Research
  • University of Science and Technology of China

Research output: Contribution to journalArticlepeer-review

Abstract

Although Cu was studied extensively, the Hall-Petch relationship was mainly reported in the coarse-grained regime. In this work, fully recrystallized Cu specimens with a wide grain size regime of 0.51–14.93 μm manifest a two-stage Hall-Petch relationship. There is a critical grain size of 3 μm that divides stages I and II where the Hall-Petch slope k value are quite different. The stage II is supposed to be validified down to 100 nm at least by comparing with a Cu-Ag alloy. The critical grain size varies in different materials systems, and the underline mechanisms are discussed based on the dislocation glide modes.

Original languageEnglish
Pages (from-to)31-35
Number of pages5
JournalJournal of Materials Science and Technology
Volume48
DOIs
StatePublished - 1 Jul 2020

Keywords

  • Cu
  • Hall-Petch relationship
  • Recrystallization
  • Ultrafine grain
  • Yield strength

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