Two SiC JFET Simulation Model Considering Temperature Influence

To tackle the problem of low availability of physical parameters in physical modeling and hard to obtain of large scale experiment data in behavioral modeling, two practical and convenient models of silicon carbide (SiC) JFET considering temperature are proposed in this paper. Model I, based on JFET template where the difficulty lies in extract template parameters of the modeled SiC JFET precisely; Model II, a sub-circuit model built in Saber, based on the PSpice JFET model provided by the vendor. Since the PSpice model provided cannot be converted directly to Saber model, so there is a need to realize and adjust the PSpice model parameters to simulate the device accurately under static and dynamic characteristics. At the end, efficiency and effectiveness of both models are verified through digital simulation and experimental tests along with static and switching characteristics.