Abstract
Defect engineering in the inherently inert basal planes of transition metal dichalcogenides (TMDs), involving the introduction of chalcogen vacancies, represents a pivotal approach to enhance catalytic activity by exposing high-density catalytic metal single-atom sites. However, achieving a single-atom limit spacing between chalcogen vacancies to form ordered superstructures remains challenging for creating uniformly distributed high-density metal single-atom sites on TMDs comparable to carbon-supported single-atom catalysts (SACs). Here we unveil an efficient TMD-based topological catalyst for hydrogen evolution reaction (HER), featuring high-density single-atom reactive centers on a few-layer (7 × 7)-PtTe2-x superstructure. Compared with pristine Pt(111), PtTe2, and (2 × 2)-PtTe2-x, (7 × 7)-PtTe2-x exhibits superior HER performance owing to its substantially increased density of undercoordinated Pt sites, alongside exceptional catalytic stability when operating at high current densities. First-principles calculations confirm that multiple types of undercoordinated Pt sites on (7 × 7)-PtTe2-x exhibit favorable hydrogen adsorption Gibbs free energies, and remain active upon increasing hydrogen coverage. Furthermore, (7 × 7)-PtTe2-x possesses nontrivial band topologies with robust edge states, suggesting potential enhancements for HER. Our findings are expected to advance TMD-based catalysts and exploration of topological materials in catalysis.
| Original language | English |
|---|---|
| Pages (from-to) | 32635-32649 |
| Number of pages | 15 |
| Journal | ACS Nano |
| Volume | 18 |
| Issue number | 47 |
| DOIs | |
| State | Published - 26 Nov 2024 |
Keywords
- few-layer platinum telluride
- hydrogen evolution
- nontrivial band topology
- periodic Te vacancies
- precise nanofabrication
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