Two-dimensional ordering arrays of InAsxP1-x islands formed by As/P exchange reaction on InP (3 1 1)B surface

H. Z. Xu; K. Akahane; H. Z. Song; Y. Okada; M. Kawabe

doi:10.1016/S0022-0248(01)01618-9

Two-dimensional ordering arrays of InAs_xP_1-x islands formed by As/P exchange reaction on InP (3 1 1)B surface

H. Z. Xu^*
, K. Akahane
, H. Z. Song
, Y. Okada
, M. Kawabe

^*Corresponding author for this work

University of Tsukuba

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Coherent InAs_xP_1-x islands were formed on the InP (100) and the InP (3 1 1)B surfaces by As/P exchange reaction under As flux and atomic H irradiation at 480°C. Islands on the InP (1 0 0) surface were found only formed at the step edges with an extremely low density. Contrary to the InP (1 0 0) surface, dense islands were formed on the InP (3 1 1)B surface. Especially, the InAs_xP_1-x island arrays on the InP (3 1 1)B surface exhibited a significant narrowing of the size dispersion and a surprisingly strong nearest-neighbor correlation. It is suggested that long-range elastic interaction between self-assembled islands via the anisotropically strained substrate play a crucial role in this self-organization process.

Original language	English
Pages (from-to)	639-644
Number of pages	6
Journal	Journal of Crystal Growth
Volume	233
Issue number	4
DOIs	https://doi.org/10.1016/S0022-0248(01)01618-9
State	Published - Dec 2001
Externally published	Yes

Keywords

A1. atomic force microscopy
A1. low dimensional structures
B2. semiconducting III-V matrials

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10.1016/S0022-0248(01)01618-9

Cite this

@article{ab29f1df393d4af0a2921023cb2c88b4,

title = "Two-dimensional ordering arrays of InAsxP1-x islands formed by As/P exchange reaction on InP (3 1 1)B surface",

abstract = "Coherent InAsxP1-x islands were formed on the InP (100) and the InP (3 1 1)B surfaces by As/P exchange reaction under As flux and atomic H irradiation at 480°C. Islands on the InP (1 0 0) surface were found only formed at the step edges with an extremely low density. Contrary to the InP (1 0 0) surface, dense islands were formed on the InP (3 1 1)B surface. Especially, the InAsxP1-x island arrays on the InP (3 1 1)B surface exhibited a significant narrowing of the size dispersion and a surprisingly strong nearest-neighbor correlation. It is suggested that long-range elastic interaction between self-assembled islands via the anisotropically strained substrate play a crucial role in this self-organization process.",

keywords = "A1. atomic force microscopy, A1. low dimensional structures, B2. semiconducting III-V matrials",

author = "Xu, \{H. Z.\} and K. Akahane and Song, \{H. Z.\} and Y. Okada and M. Kawabe",

year = "2001",

month = dec,

doi = "10.1016/S0022-0248(01)01618-9",

language = "英语",

volume = "233",

pages = "639--644",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "4",

}

TY - JOUR

T1 - Two-dimensional ordering arrays of InAsxP1-x islands formed by As/P exchange reaction on InP (3 1 1)B surface

AU - Xu, H. Z.

AU - Akahane, K.

AU - Song, H. Z.

AU - Okada, Y.

AU - Kawabe, M.

PY - 2001/12

Y1 - 2001/12

N2 - Coherent InAsxP1-x islands were formed on the InP (100) and the InP (3 1 1)B surfaces by As/P exchange reaction under As flux and atomic H irradiation at 480°C. Islands on the InP (1 0 0) surface were found only formed at the step edges with an extremely low density. Contrary to the InP (1 0 0) surface, dense islands were formed on the InP (3 1 1)B surface. Especially, the InAsxP1-x island arrays on the InP (3 1 1)B surface exhibited a significant narrowing of the size dispersion and a surprisingly strong nearest-neighbor correlation. It is suggested that long-range elastic interaction between self-assembled islands via the anisotropically strained substrate play a crucial role in this self-organization process.

AB - Coherent InAsxP1-x islands were formed on the InP (100) and the InP (3 1 1)B surfaces by As/P exchange reaction under As flux and atomic H irradiation at 480°C. Islands on the InP (1 0 0) surface were found only formed at the step edges with an extremely low density. Contrary to the InP (1 0 0) surface, dense islands were formed on the InP (3 1 1)B surface. Especially, the InAsxP1-x island arrays on the InP (3 1 1)B surface exhibited a significant narrowing of the size dispersion and a surprisingly strong nearest-neighbor correlation. It is suggested that long-range elastic interaction between self-assembled islands via the anisotropically strained substrate play a crucial role in this self-organization process.

KW - A1. atomic force microscopy

KW - A1. low dimensional structures

KW - B2. semiconducting III-V matrials

UR - https://www.scopus.com/pages/publications/0035546493

U2 - 10.1016/S0022-0248(01)01618-9

DO - 10.1016/S0022-0248(01)01618-9

M3 - 文章

AN - SCOPUS:0035546493

SN - 0022-0248

VL - 233

SP - 639

EP - 644

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 4

ER -

Two-dimensional ordering arrays of InAs_xP_1-x islands formed by As/P exchange reaction on InP (3 1 1)B surface

Abstract

Keywords

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