Tuning electrical and photoelectrical properties of cdse nanowires via indium doping

Zhubing He; Jiansheng Jie; Wenjun Zhang; Wenfeng Zhang; Linbao Luo; Xia Fan; Guodong Yuan; Igor Bello; Shuit Tong Lee

doi:10.1002/smll.200801006

Tuning electrical and photoelectrical properties of cdse nanowires via indium doping

Zhubing He^*
, Jiansheng Jie
, Wenjun Zhang
, Wenfeng Zhang
, Linbao Luo
, Xia Fan
, Guodong Yuan
, Igor Bello
, Shuit Tong Lee

^*Corresponding author for this work

City University of Hong Kong
Hefei University of Technology

Research output: Contribution to journal › Article › peer-review

85 Scopus citations

Abstract

A systematic study on preparing n-type CdSe nanowires (NW) with tunable conductivity was presented and the photoelectrical characteristics of the doped NWs were investigated. In situ doping by introducing indium dopant during NW growth and post-growth doping by annealing the NWs in indium vapor was carried out for indium doping of CdSe NWs. The results show that the CdSe NWs are clean and smooth without visible particles and impurities and the diameter and length of the NWs are in the range of 50-120 nm and 10-100μm. The conductivity of undoped CdSe NWs measured by the four-probe method is found to be one order of magnitude lower than that of undoped CdSe films prepared by vacuum evaporation. The spectral response of the doped CdSe NWs demonstrate that sensitivity is the highest around 710 nm and decreases at longer light wave-lengths.

Original language	English
Pages (from-to)	345-350
Number of pages	6
Journal	Small
Volume	5
Issue number	3
DOIs	https://doi.org/10.1002/smll.200801006
State	Published - 6 Feb 2009
Externally published	Yes

Keywords

Doping
Indium
Nanostructures
Semiconductors
Transistors

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10.1002/smll.200801006

Cite this

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title = "Tuning electrical and photoelectrical properties of cdse nanowires via indium doping",

abstract = "A systematic study on preparing n-type CdSe nanowires (NW) with tunable conductivity was presented and the photoelectrical characteristics of the doped NWs were investigated. In situ doping by introducing indium dopant during NW growth and post-growth doping by annealing the NWs in indium vapor was carried out for indium doping of CdSe NWs. The results show that the CdSe NWs are clean and smooth without visible particles and impurities and the diameter and length of the NWs are in the range of 50-120 nm and 10-100μm. The conductivity of undoped CdSe NWs measured by the four-probe method is found to be one order of magnitude lower than that of undoped CdSe films prepared by vacuum evaporation. The spectral response of the doped CdSe NWs demonstrate that sensitivity is the highest around 710 nm and decreases at longer light wave-lengths.",

keywords = "Doping, Indium, Nanostructures, Semiconductors, Transistors",

author = "Zhubing He and Jiansheng Jie and Wenjun Zhang and Wenfeng Zhang and Linbao Luo and Xia Fan and Guodong Yuan and Igor Bello and Lee, \{Shuit Tong\}",

year = "2009",

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doi = "10.1002/smll.200801006",

language = "英语",

volume = "5",

pages = "345--350",

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}

TY - JOUR

T1 - Tuning electrical and photoelectrical properties of cdse nanowires via indium doping

AU - He, Zhubing

AU - Jie, Jiansheng

AU - Zhang, Wenjun

AU - Zhang, Wenfeng

AU - Luo, Linbao

AU - Fan, Xia

AU - Yuan, Guodong

AU - Bello, Igor

AU - Lee, Shuit Tong

PY - 2009/2/6

Y1 - 2009/2/6

N2 - A systematic study on preparing n-type CdSe nanowires (NW) with tunable conductivity was presented and the photoelectrical characteristics of the doped NWs were investigated. In situ doping by introducing indium dopant during NW growth and post-growth doping by annealing the NWs in indium vapor was carried out for indium doping of CdSe NWs. The results show that the CdSe NWs are clean and smooth without visible particles and impurities and the diameter and length of the NWs are in the range of 50-120 nm and 10-100μm. The conductivity of undoped CdSe NWs measured by the four-probe method is found to be one order of magnitude lower than that of undoped CdSe films prepared by vacuum evaporation. The spectral response of the doped CdSe NWs demonstrate that sensitivity is the highest around 710 nm and decreases at longer light wave-lengths.

AB - A systematic study on preparing n-type CdSe nanowires (NW) with tunable conductivity was presented and the photoelectrical characteristics of the doped NWs were investigated. In situ doping by introducing indium dopant during NW growth and post-growth doping by annealing the NWs in indium vapor was carried out for indium doping of CdSe NWs. The results show that the CdSe NWs are clean and smooth without visible particles and impurities and the diameter and length of the NWs are in the range of 50-120 nm and 10-100μm. The conductivity of undoped CdSe NWs measured by the four-probe method is found to be one order of magnitude lower than that of undoped CdSe films prepared by vacuum evaporation. The spectral response of the doped CdSe NWs demonstrate that sensitivity is the highest around 710 nm and decreases at longer light wave-lengths.

KW - Doping

KW - Indium

KW - Nanostructures

KW - Semiconductors

KW - Transistors

UR - https://www.scopus.com/pages/publications/60849090477

U2 - 10.1002/smll.200801006

DO - 10.1002/smll.200801006

M3 - 文章

C2 - 19058288

AN - SCOPUS:60849090477

SN - 1613-6810

VL - 5

SP - 345

EP - 350

JO - Small

JF - Small

IS - 3

ER -

Tuning electrical and photoelectrical properties of cdse nanowires via indium doping

Abstract

Keywords

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