Tunable Nonreciprocal Response of KTaO3-Based Two-Terminal Device

Hui Zhang; Dongyao Zheng; Yinan Xiao; Daming Tian; Weijian Qi; Fengxia Hu; Baogen Shen; Jirong Sun; Weisheng Zhao

doi:10.1109/LED.2024.3355240

Tunable Nonreciprocal Response of KTaO₃-Based Two-Terminal Device

Hui Zhang^*
, Dongyao Zheng
, Yinan Xiao
, Daming Tian
, Weijian Qi
, Fengxia Hu
, Baogen Shen
, Jirong Sun
, Weisheng Zhao^*

^*Corresponding author for this work

School of Integrated Circuit Science and Engineering

Beihang University
CAS - Institute of Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

Two-dimensional electron gases (2DEGs) at oxide interfaces possess many interesting physical properties. Particularly, when the time reversal symmetry is broken, they display a large unidirectional magnetoresistance, which is essential for exploiting two-terminal devices based on such a nonreciprocal response. Here we report a nonreciprocal charge transport behavior in conductive 2DEG at the LaAlO3/KTaO3 interface, and the nonreciprocal coefficient of up to ~6.8 × 10-10A-1T-1cm2 is obtained. Remarkably, the nonreciprocal response is highly tunable by applying gate voltages in a field-effect device.

Original language	English
Pages (from-to)	508-511
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	45
Issue number	3
DOIs	https://doi.org/10.1109/LED.2024.3355240
State	Published - 1 Mar 2024

Keywords

Nonreciprocal response
Rashba spin-orbit coupling
gating effect
two-dimensional electron gases
two-terminal device

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10.1109/LED.2024.3355240

Cite this

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title = "Tunable Nonreciprocal Response of KTaO3-Based Two-Terminal Device",

abstract = "Two-dimensional electron gases (2DEGs) at oxide interfaces possess many interesting physical properties. Particularly, when the time reversal symmetry is broken, they display a large unidirectional magnetoresistance, which is essential for exploiting two-terminal devices based on such a nonreciprocal response. Here we report a nonreciprocal charge transport behavior in conductive 2DEG at the LaAlO3/KTaO3 interface, and the nonreciprocal coefficient of up to \textasciitilde{}6.8 × 10-10A-1T-1cm2 is obtained. Remarkably, the nonreciprocal response is highly tunable by applying gate voltages in a field-effect device.",

keywords = "Nonreciprocal response, Rashba spin-orbit coupling, gating effect, two-dimensional electron gases, two-terminal device",

author = "Hui Zhang and Dongyao Zheng and Yinan Xiao and Daming Tian and Weijian Qi and Fengxia Hu and Baogen Shen and Jirong Sun and Weisheng Zhao",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2024",

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doi = "10.1109/LED.2024.3355240",

language = "英语",

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T1 - Tunable Nonreciprocal Response of KTaO3-Based Two-Terminal Device

AU - Zhang, Hui

AU - Zheng, Dongyao

AU - Xiao, Yinan

AU - Tian, Daming

AU - Qi, Weijian

AU - Hu, Fengxia

AU - Shen, Baogen

AU - Sun, Jirong

AU - Zhao, Weisheng

PY - 2024/3/1

Y1 - 2024/3/1

N2 - Two-dimensional electron gases (2DEGs) at oxide interfaces possess many interesting physical properties. Particularly, when the time reversal symmetry is broken, they display a large unidirectional magnetoresistance, which is essential for exploiting two-terminal devices based on such a nonreciprocal response. Here we report a nonreciprocal charge transport behavior in conductive 2DEG at the LaAlO3/KTaO3 interface, and the nonreciprocal coefficient of up to ~6.8 × 10-10A-1T-1cm2 is obtained. Remarkably, the nonreciprocal response is highly tunable by applying gate voltages in a field-effect device.

AB - Two-dimensional electron gases (2DEGs) at oxide interfaces possess many interesting physical properties. Particularly, when the time reversal symmetry is broken, they display a large unidirectional magnetoresistance, which is essential for exploiting two-terminal devices based on such a nonreciprocal response. Here we report a nonreciprocal charge transport behavior in conductive 2DEG at the LaAlO3/KTaO3 interface, and the nonreciprocal coefficient of up to ~6.8 × 10-10A-1T-1cm2 is obtained. Remarkably, the nonreciprocal response is highly tunable by applying gate voltages in a field-effect device.

KW - Nonreciprocal response

KW - Rashba spin-orbit coupling

KW - gating effect

KW - two-dimensional electron gases

KW - two-terminal device

UR - https://www.scopus.com/pages/publications/85182927788

U2 - 10.1109/LED.2024.3355240

DO - 10.1109/LED.2024.3355240

M3 - 文章

AN - SCOPUS:85182927788

SN - 0741-3106

VL - 45

SP - 508

EP - 511

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

Tunable Nonreciprocal Response of KTaO₃-Based Two-Terminal Device

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Keywords

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