Transmission through the band-gap states in Schottky-barrier carbon nanotube transistors

Tongsheng Xia; Leonard F. Register; Sanjay K. Banerjee

doi:10.1109/TNANO.2006.869693

Transmission through the band-gap states in Schottky-barrier carbon nanotube transistors

Tongsheng Xia^*
, Leonard F. Register
, Sanjay K. Banerjee

^*Corresponding author for this work

IEEE
University of Texas at Austin

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We have studied the minimum off-state leakage current of ultrascaled Schottky-barrier carbon nanotube transistors (SBCNTs) with midgap Schottky-barrier source/drain contacts. The off-state leakage current is separated into two parts: thermal emission around the top of the Schottky barrier and tunneling through the evanescent band-gap states. Because the transmission through deep band-gap states makes a dominant contribution for ultrascaled SBCNTs, the off-state minimum leakage current increases exponentially with decreasing scaling length of SBCNTs.

Original language	English
Pages (from-to)	80-83
Number of pages	4
Journal	IEEE Transactions on Nanotechnology
Volume	5
Issue number	2
DOIs	https://doi.org/10.1109/TNANO.2006.869693
State	Published - Mar 2006
Externally published	Yes

Keywords

Band-gap states
Minimum leakage current
Schottky barrier

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10.1109/TNANO.2006.869693

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title = "Transmission through the band-gap states in Schottky-barrier carbon nanotube transistors",

abstract = "We have studied the minimum off-state leakage current of ultrascaled Schottky-barrier carbon nanotube transistors (SBCNTs) with midgap Schottky-barrier source/drain contacts. The off-state leakage current is separated into two parts: thermal emission around the top of the Schottky barrier and tunneling through the evanescent band-gap states. Because the transmission through deep band-gap states makes a dominant contribution for ultrascaled SBCNTs, the off-state minimum leakage current increases exponentially with decreasing scaling length of SBCNTs.",

keywords = "Band-gap states, Minimum leakage current, Schottky barrier",

author = "Tongsheng Xia and Register, \{Leonard F.\} and Banerjee, \{Sanjay K.\}",

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AU - Register, Leonard F.

AU - Banerjee, Sanjay K.

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N2 - We have studied the minimum off-state leakage current of ultrascaled Schottky-barrier carbon nanotube transistors (SBCNTs) with midgap Schottky-barrier source/drain contacts. The off-state leakage current is separated into two parts: thermal emission around the top of the Schottky barrier and tunneling through the evanescent band-gap states. Because the transmission through deep band-gap states makes a dominant contribution for ultrascaled SBCNTs, the off-state minimum leakage current increases exponentially with decreasing scaling length of SBCNTs.

AB - We have studied the minimum off-state leakage current of ultrascaled Schottky-barrier carbon nanotube transistors (SBCNTs) with midgap Schottky-barrier source/drain contacts. The off-state leakage current is separated into two parts: thermal emission around the top of the Schottky barrier and tunneling through the evanescent band-gap states. Because the transmission through deep band-gap states makes a dominant contribution for ultrascaled SBCNTs, the off-state minimum leakage current increases exponentially with decreasing scaling length of SBCNTs.

KW - Band-gap states

KW - Minimum leakage current

KW - Schottky barrier

UR - https://www.scopus.com/pages/publications/33645007141

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DO - 10.1109/TNANO.2006.869693

M3 - 文章

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JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 2

ER -

Transmission through the band-gap states in Schottky-barrier carbon nanotube transistors

Abstract

Keywords

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