Transmission performance of a low-loss metal-insulator-semiconductor plasmonic phase-shift Bragg grating

We propose a plasmonics phase-shift Bragg grating based on a metal-insulator-semiconductor structure in the wavelength range of 1400-1700 nm. The Bragg grating is formed by a periodic height variation of a semiconductor strip that is separated from a metal surface by a nanoscale insulator layer. Moreover, a phase-shift structure was introduced in the middle of the Bragg grating. Simulation results demonstrate that the proposed structure exhibits good filtering characteristics with a strong field enhancement. The proposed phase-shift Bragg grating could be used as an ultracompact filter and enable on-chip integration of photonic circuits.