TY - CHAP
T1 - Towards Spintronics Nonvolatile Caches
AU - Wang, Zhaohao
AU - Wu, Bi
AU - Wang, Chao
AU - Kang, Wang
AU - Zhao, Weisheng
N1 - Publisher Copyright:
© 2020, Springer Nature Singapore Pte Ltd.
PY - 2020
Y1 - 2020
N2 - Non-volatile (NV) cache is desired for overcoming the power and speed bottlenecks of the modern static random access memory (SRAM). A promising candidate for constructing the NV cache is the spin transfer torque magnetic RAM (STT-MRAM), which is featured with low power, fast speed, high density and nearly unlimited endurance. In this chapter, we will review the efforts made to realize the STT-MRAM based NV cache, ranging from architecture to device levels. In addition, the application potential of emerging spintronics technologies, such as spin orbit torque (SOT) and voltage-controlled magnetic anisotropy (VCMA), will be discussed in terms of their benefits and challenges.
AB - Non-volatile (NV) cache is desired for overcoming the power and speed bottlenecks of the modern static random access memory (SRAM). A promising candidate for constructing the NV cache is the spin transfer torque magnetic RAM (STT-MRAM), which is featured with low power, fast speed, high density and nearly unlimited endurance. In this chapter, we will review the efforts made to realize the STT-MRAM based NV cache, ranging from architecture to device levels. In addition, the application potential of emerging spintronics technologies, such as spin orbit torque (SOT) and voltage-controlled magnetic anisotropy (VCMA), will be discussed in terms of their benefits and challenges.
UR - https://www.scopus.com/pages/publications/85069759610
U2 - 10.1007/978-981-13-8379-3_1
DO - 10.1007/978-981-13-8379-3_1
M3 - 章节
AN - SCOPUS:85069759610
T3 - Springer Series in Advanced Microelectronics
SP - 1
EP - 28
BT - Springer Series in Advanced Microelectronics
PB - Springer Verlag
ER -