TY - GEN
T1 - Toward Low Soft Error Sensitivity and Latency Near Memory Computing with EB MRAM
AU - Li, Yueting
AU - Zhu, Daoqian
AU - Wang, Jinkai
AU - Zhang, Yue
AU - Zhao, Weisheng
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Magnetic random-access memory (MRAM) suffers from reliability issues subject to the harsh industrial environment and applications with limited hardware resources. Thus, we propose the new spin-orbit torque MRAM (SOT-MRAM) scheme called exchange bias (EB) MRAM for error-tolerant application. EB MRAM enhances reliability from its immunity to external magnetic and higher endurance. In addition, this paper presents near-memory computing (NMC) with EB MRAM to further achieve low soft error sensitivity and latency implementation. In the proposed scheme, the NMC controller exploits the accelerated design to reduce data movement, and EB MRAM as the computation memory is performed with subword-level compression. The experimental results show that the access time and energy of EB MRAM is only 0.9ns and 0.113pJ/bit while the data compressed rate is up to 75% with 2.05% loss over the state-of-the-art designs.
AB - Magnetic random-access memory (MRAM) suffers from reliability issues subject to the harsh industrial environment and applications with limited hardware resources. Thus, we propose the new spin-orbit torque MRAM (SOT-MRAM) scheme called exchange bias (EB) MRAM for error-tolerant application. EB MRAM enhances reliability from its immunity to external magnetic and higher endurance. In addition, this paper presents near-memory computing (NMC) with EB MRAM to further achieve low soft error sensitivity and latency implementation. In the proposed scheme, the NMC controller exploits the accelerated design to reduce data movement, and EB MRAM as the computation memory is performed with subword-level compression. The experimental results show that the access time and energy of EB MRAM is only 0.9ns and 0.113pJ/bit while the data compressed rate is up to 75% with 2.05% loss over the state-of-the-art designs.
KW - EB MRAM
KW - Error-tolerant Application
KW - Near Memory Computing
KW - SOT-MRAM
UR - https://www.scopus.com/pages/publications/85177183009
U2 - 10.1109/INTERMAGShortPapers58606.2023.10305067
DO - 10.1109/INTERMAGShortPapers58606.2023.10305067
M3 - 会议稿件
AN - SCOPUS:85177183009
T3 - 2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings
BT - 2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023
Y2 - 15 May 2023 through 19 May 2023
ER -