@inproceedings{25e5cbeff0164c2c83fc2fe6e805c2c6,
title = "Total Dose and Single Event Effects on 16 Mbit Standalone Spin-Transfer Torque MRAM with 45 nm CMOS Technology",
abstract = "Magnetic Random Access Memory (MRAM) is regarded as one of the most promising memory solutions for space missions since the storage mechanism of magnetic tunnel junction (MTJ) as the memory unit is naturally insensitive to the radiation effects. For the application of highly reliable MRAM., the total dose and ion beam radiation responses of a commercial STT-MRAM are evaluated in this work. The results indicate that MTJ is inherently radiation tolerant, while the peripheral circuit exhibits soft errors during ion beam irradiation. We analyze the single event effect (SEE) and look into the soft errors caused by the single event upset (SEU). Finally, considering the special STT-MRAM architecture, possible inducements of the experimental phenomena are discussed.",
keywords = "single event effect, single event upset, single ion soft errors, STT-MRAM, total dose radiation",
author = "Anni Cao and Xin Li and Liang Wang and Jianpeng Zhang and Chunliang Gou and Liquan Liu and Bi Wang and Xing Zhang and Yuanfu Zhao",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2022 ; Conference date: 11-11-2022 Through 13-11-2022",
year = "2022",
doi = "10.1109/APCCAS55924.2022.10090320",
language = "英语",
series = "APCCAS 2022 - 2022 IEEE Asia Pacific Conference on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "528--531",
booktitle = "APCCAS 2022 - 2022 IEEE Asia Pacific Conference on Circuits and Systems",
address = "美国",
}