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Thermoelectric properties of Mg doped p-type BiCuSeO oxyselenides

  • Jing Li
  • , Jiehe Sui*
  • , Celine Barreteau
  • , David Berardan
  • , Nita Dragoe
  • , Wei Cai
  • , Yanling Pei
  • , Li Dong Zhao
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We report on the effect of Mg doping on the thermoelectric properties of p-type BiCuSeO oxyselenide, with layer structure composed of conductive (Cu 2Se2)2- layers alternately stacked with insulating (Bi2O2)2+ layers. The substitution of Bi3+ by Mg2+ leads to an enhancement of the electrical conductivity and a decrease of the thermal conductivity. Coupled to high Seebeck coefficients, ZT at 923 K is increased from 0.45 for pristine BiCuSeO to 0.67 for Bi0.95Mg0.05CuSeO. However, the efficiency of Mg doping in the insulating (Bi2O2)2+ layer is low, and this doping only leads to a limited increase of the hole carriers concentration. Therefore Mg doped BiCuSeO has relatively low electrical conductivity which makes its thermoelectric figure of merit much lower than that of Ca, Sr and Ba doped BiCuSeO.

Original languageEnglish
Pages (from-to)649-653
Number of pages5
JournalJournal of Alloys and Compounds
Volume551
DOIs
StatePublished - 25 Feb 2013

Keywords

  • BiCuSeO
  • Electrical conductivity
  • Seebeck coefficient
  • Thermal conductivity
  • Thermoelectric

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