Theoretical study about the formation of the stacking faults in GaN nanowires along different growth directions

Xiaojing Gong; Jingping Zhang; Ke Xu; Zhigao Wang; Hui Yang; Rong Yu; Wei Zhan

doi:10.4028/www.scientific.net/AMR.268-270.950

Theoretical study about the formation of the stacking faults in GaN nanowires along different growth directions

Xiaojing Gong^*
, Jingping Zhang
, Ke Xu
, Zhigao Wang
, Hui Yang
, Rong Yu
, Wei Zhan

^*Corresponding author for this work

CAS - Suzhou Institute of Nano-Tech and Nano-Bionics
Suzhou Nanowin Science and Technology Co., Ltd
University of Chinese Academy of Sciences
Tsinghua University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which allows for new device concepts. However, essential parameters that determine the electronic quality of the wires, and which have not been controlled yet for the III-V compound semiconductors, are the wire crystal structure and the stacking fault density. In this paper, we have used the molecular dynamics simulations to study the formation of the stacking faults in GaN NW along [0001] and [11-20] directions. The results show that under same growth condition the GaN NW along [0001] has stacking fault while there is no stacking fault in GaN NW along [11-20]. We have analysis the possible reason and further study is underway.

Original language	English
Title of host publication	Computational Materials Science, CMS 2011
Pages	950-954
Number of pages	5
DOIs	https://doi.org/10.4028/www.scientific.net/AMR.268-270.950
State	Published - 2011
Externally published	Yes
Event	2011 International Conference on Computational Materials Science, CMS 2011 - Guangzhou, China Duration: 17 Apr 2011 → 18 Apr 2011

Publication series

Name	Advanced Materials Research
Volume	268-270
ISSN (Print)	1022-6680

Conference

Conference	2011 International Conference on Computational Materials Science, CMS 2011
Country/Territory	China
City	Guangzhou
Period	17/04/11 → 18/04/11

Keywords

Gallium nitride nanowire
Molecular dynamics simulations
Stacking faults

Access to Document

10.4028/www.scientific.net/AMR.268-270.950

Cite this

@inproceedings{2c604c5b51b74a1386f5bbb9725f7356,

title = "Theoretical study about the formation of the stacking faults in GaN nanowires along different growth directions",

abstract = "Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which allows for new device concepts. However, essential parameters that determine the electronic quality of the wires, and which have not been controlled yet for the III-V compound semiconductors, are the wire crystal structure and the stacking fault density. In this paper, we have used the molecular dynamics simulations to study the formation of the stacking faults in GaN NW along [0001] and [11-20] directions. The results show that under same growth condition the GaN NW along [0001] has stacking fault while there is no stacking fault in GaN NW along [11-20]. We have analysis the possible reason and further study is underway.",

keywords = "Gallium nitride nanowire, Molecular dynamics simulations, Stacking faults",

author = "Xiaojing Gong and Jingping Zhang and Ke Xu and Zhigao Wang and Hui Yang and Rong Yu and Wei Zhan",

year = "2011",

doi = "10.4028/www.scientific.net/AMR.268-270.950",

language = "英语",

isbn = "9783037851555",

series = "Advanced Materials Research",

pages = "950--954",

booktitle = "Computational Materials Science, CMS 2011",

note = "2011 International Conference on Computational Materials Science, CMS 2011 ; Conference date: 17-04-2011 Through 18-04-2011",

}

Gong, X, Zhang, J, Xu, K, Wang, Z, Yang, H, Yu, R & Zhan, W 2011, Theoretical study about the formation of the stacking faults in GaN nanowires along different growth directions. in Computational Materials Science, CMS 2011. Advanced Materials Research, vol. 268-270, pp. 950-954, 2011 International Conference on Computational Materials Science, CMS 2011, Guangzhou, China, 17/04/11. https://doi.org/10.4028/www.scientific.net/AMR.268-270.950

Theoretical study about the formation of the stacking faults in GaN nanowires along different growth directions. / Gong, Xiaojing; Zhang, Jingping; Xu, Ke et al.
Computational Materials Science, CMS 2011. 2011. p. 950-954 (Advanced Materials Research; Vol. 268-270).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Theoretical study about the formation of the stacking faults in GaN nanowires along different growth directions

AU - Gong, Xiaojing

AU - Zhang, Jingping

AU - Xu, Ke

AU - Wang, Zhigao

AU - Yang, Hui

AU - Yu, Rong

AU - Zhan, Wei

PY - 2011

Y1 - 2011

N2 - Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which allows for new device concepts. However, essential parameters that determine the electronic quality of the wires, and which have not been controlled yet for the III-V compound semiconductors, are the wire crystal structure and the stacking fault density. In this paper, we have used the molecular dynamics simulations to study the formation of the stacking faults in GaN NW along [0001] and [11-20] directions. The results show that under same growth condition the GaN NW along [0001] has stacking fault while there is no stacking fault in GaN NW along [11-20]. We have analysis the possible reason and further study is underway.

AB - Semiconducting nanowires offer the possibility of nearly unlimited complex bottom-up design, which allows for new device concepts. However, essential parameters that determine the electronic quality of the wires, and which have not been controlled yet for the III-V compound semiconductors, are the wire crystal structure and the stacking fault density. In this paper, we have used the molecular dynamics simulations to study the formation of the stacking faults in GaN NW along [0001] and [11-20] directions. The results show that under same growth condition the GaN NW along [0001] has stacking fault while there is no stacking fault in GaN NW along [11-20]. We have analysis the possible reason and further study is underway.

KW - Gallium nitride nanowire

KW - Molecular dynamics simulations

KW - Stacking faults

UR - https://www.scopus.com/pages/publications/79960455731

U2 - 10.4028/www.scientific.net/AMR.268-270.950

DO - 10.4028/www.scientific.net/AMR.268-270.950

M3 - 会议稿件

AN - SCOPUS:79960455731

SN - 9783037851555

T3 - Advanced Materials Research

SP - 950

EP - 954

BT - Computational Materials Science, CMS 2011

T2 - 2011 International Conference on Computational Materials Science, CMS 2011

Y2 - 17 April 2011 through 18 April 2011

ER -

Theoretical study about the formation of the stacking faults in GaN nanowires along different growth directions

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Keywords

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