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Theoretical analysis of stresses in interface of bonded wafers

  • Zhen Zhou*
  • , Xijun Kong
  • , Yongqing Huang
  • , Xiaomin Ren
  • *Corresponding author for this work
  • Beijing University of Posts and Telecommunications

Research output: Contribution to journal › Article › peer-review

Abstract

The theoretical distribution of stresses in the interface of bonded wafers and thin films subjected to uniform heating or cooling are studied according to the theory of stresses arising in bimetal strips. The characteristics of distribution of the shearing stresses, as well as normal and peeling stresses which influence the quality of bonded wafers are discussed.

Original languageEnglish
Pages (from-to)1176-1179
Number of pages4
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume24
Issue number11
StatePublished - Nov 2003
Externally publishedYes

Keywords

  • Bonding
  • Normal stress
  • Peeling stress
  • Shearing stress

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