The study on the morphology control of silicon etching by ICP

Morphology control of silicon etching is one of the key technologies in fabrication of MEMS devices,which is a accurate balance between surface etching of silicon and the passivation reaction ; any parameter that affects these previous two issues would have an effect on the final morphology The key process parameters that can affect morphology during the ICP etching process were studied and analyzed,based on ICP etching machine(ICP-98A) using chemical equilibrium principles, manufactured by the Microelectronics R&D Center, CAS. The affect on etching morphology by the source power RF₁, radio frequency RF₂ and gas ratio (SF₆ to C₄F ₈) were researched. The appearance of Bowing phenomenon were analyzed and the fabrication methods were given to reduce the phenomenon. This research has an significant guiding effect to the study of improving morphology control by silicon ICP.