Abstract
The thermoelectric properties of the Bi1-xNaxCuSeO (0.0 ≤ x ≤ 0.02) system have been investigated in the temperature range 300-923 K. Na doping significantly increased the carrier concentration to ∼0.92 × 1020 cm-3 at the doping amount of x = 0.02. Furthermore, a relatively high carrier mobility and a slight Seebeck coefficient enhancement was seen, thus resulting in a high power factor of 8.0 μW cm-1 K-2 at room temperature. Coupled with a low thermal conductivity reduced by point defects scattering, this leads to a ZT of 0.91 at 923 K for Bi0.985Na0.015CuSeO which is nearly twice the value observed in pristine BiCuSeO. This journal is
| Original language | English |
|---|---|
| Pages (from-to) | 4903-4906 |
| Number of pages | 4 |
| Journal | Journal of Materials Chemistry A |
| Volume | 2 |
| Issue number | 14 |
| DOIs | |
| State | Published - 14 Apr 2014 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
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