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The photoluminescence from (Eu, Yb) co-doped silicon-rich Si oxides

  • Cheng Lin Heng
  • , Wen Yong Su
  • , Q. W. Zhang
  • , X. Q. Ren
  • , P. G. Yin
  • , H. P. Pan
  • , S. D. Yao
  • , Terje G. Finstad
  • Beijing Institute of Technology
  • Beihang University
  • Peking University
  • University of Oslo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report on photoluminescence (PL) properties of europium (Eu) and ytterbium (Yb) co-doped silicon oxide films with different Si excess. After annealing the films in N2, strong PL were observed from Eu and Yb3+ ions and their intensities are correlated. The PL intensity of Eu is mainly from 3+ for no and relatively low temperature anneals (<900 °C) while the Eu2+ emission is dominating for annealing at 1000 °C or above in the co-doped Si-rich oxide films. Transmission electron microscopy shows amorphous (Eu, Yb, Si, O)-containing precipitates in the Si-rich oxide during 1000-1200 °C annealing and these precipitates are considered to be responsible for the Eu2+-related luminescence.

Original languageEnglish
Title of host publicationMaterials Science and Engineering Technology
PublisherTrans Tech Publications Ltd
Pages207-211
Number of pages5
ISBN (Print)9783038351023
DOIs
StatePublished - 2014
Event2014 International Conference on Materials Science and Engineering Technology, MSET 2014 - Shanghai, China
Duration: 28 Jun 201429 Jun 2014

Publication series

NameAdvanced Materials Research
Volume936
ISSN (Print)1022-6680
ISSN (Electronic)1662-8985

Conference

Conference2014 International Conference on Materials Science and Engineering Technology, MSET 2014
Country/TerritoryChina
CityShanghai
Period28/06/1429/06/14

Keywords

  • Energy transfer
  • Eu
  • Luminescence
  • Rare earth compounds
  • Silicon rich oxide
  • Yb

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