The on-off current and the complex band structure of armchair graphene nanoribbon field-effect transistors

This paper shows the ballistic quantum transport calculation results for the armchair graphene nanoribbon field effect transistors based on full complex band structure. Then the minimum leakage current in the I _D-V _G curve and the on current in the I _D-V _D curve are compared. It is demonstrated that in order to have the best performance of the nanoscale graphene nanoribbon field effect transistors, tradeoffs are found for the off state leakage current and the on state current, i.e., a smaller/larger off state leakage current in I _D-V _G curve may be accompanied with a smaller/larger on current in I _D-V _D curve, which is then explained by full complex band structure characteristics.