Abstract
The passive film of iron showed n-type semiconductor characteristic in borate buffer solution, and its donor concentration increased slightly after tensile strain in the present study. However, comparing with solution-annealed sample, the anodic passive film formed on tensile-strained one was highly protective. The more dislocations on tensile-strained sample promoted the diffusion of iron and oxygen vacancy. Moreover, more donor density (mainly oxygen vacancies) promoted the diffusion of oxygen. They all facilitated tensile-strained sample to form Fe2O3 and thicker passive film on the surface. More Fe2O3 and thicker passive film on the surface of tensile-strained iron could improve corrosion resistance.
| Original language | English |
|---|---|
| Pages (from-to) | 613-619 |
| Number of pages | 7 |
| Journal | Surface and Interface Analysis |
| Volume | 46 |
| Issue number | 9 |
| DOIs | |
| State | Published - Sep 2014 |
Keywords
- EIS
- Raman spectroscopy
- iron
- passive films
- polarization
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