The effect of ion implantation on the characteristics of oxide formation of copper thin films

Er Min Wang; Xiao Zhen Wang; Xin Qing Zhao

The effect of ion implantation on the characteristics of oxide formation of copper thin films

Er Min Wang
, Xiao Zhen Wang
, Xin Qing Zhao

Beijing Institute of Aeronautical Materials

Research output: Contribution to journal › Article › peer-review

Abstract

Using X-ray diffraction and Rutherford back-scattering techniques, a study has been made of the oxidation characteristics of copper thin films by Cr ion implantation. It is indicated that the implantation of Cr ions remarkably changes the Oxidation behavior and the copper oxide structures. Ion implantation suppresses the diffusion of copper atoms during oxidation and then inhibits the change of Cu₂0 to CuO. The formation mechanism of oxides before and after implantation was discussed.

Original language	English
Pages (from-to)	39-40+46
Journal	Journal of Materials Engineering
Issue number	8
State	Published - 2000
Externally published	Yes

Keywords

Copper thin films
Ion implantation
Oxidation

Cite this

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title = "The effect of ion implantation on the characteristics of oxide formation of copper thin films",

abstract = "Using X-ray diffraction and Rutherford back-scattering techniques, a study has been made of the oxidation characteristics of copper thin films by Cr ion implantation. It is indicated that the implantation of Cr ions remarkably changes the Oxidation behavior and the copper oxide structures. Ion implantation suppresses the diffusion of copper atoms during oxidation and then inhibits the change of Cu20 to CuO. The formation mechanism of oxides before and after implantation was discussed.",

keywords = "Copper thin films, Ion implantation, Oxidation",

author = "Wang, \{Er Min\} and Wang, \{Xiao Zhen\} and Zhao, \{Xin Qing\}",

year = "2000",

language = "英语",

pages = "39--40+46",

journal = "Journal of Materials Engineering",

issn = "1001-4381",

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TY - JOUR

T1 - The effect of ion implantation on the characteristics of oxide formation of copper thin films

AU - Wang, Er Min

AU - Wang, Xiao Zhen

AU - Zhao, Xin Qing

PY - 2000

Y1 - 2000

N2 - Using X-ray diffraction and Rutherford back-scattering techniques, a study has been made of the oxidation characteristics of copper thin films by Cr ion implantation. It is indicated that the implantation of Cr ions remarkably changes the Oxidation behavior and the copper oxide structures. Ion implantation suppresses the diffusion of copper atoms during oxidation and then inhibits the change of Cu20 to CuO. The formation mechanism of oxides before and after implantation was discussed.

AB - Using X-ray diffraction and Rutherford back-scattering techniques, a study has been made of the oxidation characteristics of copper thin films by Cr ion implantation. It is indicated that the implantation of Cr ions remarkably changes the Oxidation behavior and the copper oxide structures. Ion implantation suppresses the diffusion of copper atoms during oxidation and then inhibits the change of Cu20 to CuO. The formation mechanism of oxides before and after implantation was discussed.

KW - Copper thin films

KW - Ion implantation

KW - Oxidation

UR - https://www.scopus.com/pages/publications/71149111442

M3 - 文章

AN - SCOPUS:71149111442

SN - 1001-4381

SP - 39-40+46

JO - Journal of Materials Engineering

JF - Journal of Materials Engineering

IS - 8

ER -

The effect of ion implantation on the characteristics of oxide formation of copper thin films

Abstract

Keywords

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