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Tensile response of (1 1 0) twist grain boundaries in tungsten: A molecular dynamics study

  • Ya Xin Feng
  • , Jia Xiang Shang*
  • , Sheng Jian Qin
  • *Corresponding author for this work
  • Beihang University
  • Shijiazhuang Tiedao University

Research output: Contribution to journalArticlepeer-review

Abstract

Molecular dynamics simulations are performed to investigate the tensile behavior of W bicrystals with different twist grain boundaries (TGBs): the low-angle grain boundary (LAGB), the ordinary high-angle grain boundary (HAGB) and the Σ3 TGB. Owing to the initial hexagonal dislocation network (HDN), the LAGB can directly emit dislocations without dislocation nucleation: the [Formula presented]〈111〉 dislocations in HDN are pinned by bilateral nodes or 〈001〉 dislocations and form Frank-Rend dislocation sources, which continually emit dislocations and remain the structure of HDN under tensile loading. Once the HDN become disordered, Frank-Rend dislocation sources are broken and dislocations in HDN can be directly emitted. In the ordinary HAGB and Σ3 TGB, dislocations are nucleated from interfaces accompanied with apparent stress decrease at nucleation sites. Supplied with enough stress, emitted dislocations can freely pass through adjacent boundaries. By measuring dislocation densities, we find that the Σ3 TGB becomes more active at high temperature and easier to nucleate dislocations, while the LAGB and ordinary HAGB are less affected by temperature. Besides, it is found that [Formula presented]〈111〉 dislocations play a dominate role in the plastic deformation of W bicrystals regardless of TGB structures and temperature.

Original languageEnglish
Pages (from-to)265-272
Number of pages8
JournalComputational Materials Science
Volume159
DOIs
StatePublished - Mar 2019

Keywords

  • Dislocation
  • Molecular dynamics simulation
  • Tensile response
  • Tungsten
  • Twist grain boundary

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