Temperature Tunable Self-Doping in Stable Diradicaloid Thin-Film Devices

Yuan Zhang; Yonghao Zheng; Huiqiong Zhou; Mao Sheng Miao; Fred Wudl; Thuc Quyen Nguyen

doi:10.1002/adma.201502404

Temperature Tunable Self-Doping in Stable Diradicaloid Thin-Film Devices

Yuan Zhang
, Yonghao Zheng
, Huiqiong Zhou
, Mao Sheng Miao
, Fred Wudl^*
, Thuc Quyen Nguyen

^*Corresponding author for this work

School of Chemistry

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

FDT and FDT-Br diradicaloids with stable coexisting close-shell and open-shell forms exhibit unconventional self-doping behavior in solid-state electronic devices that is temperature (T) tunable and reversible. The doping is strengthened by the increased T, leading to the absence of off-states (I_off) in the transistors.

Original language	English
Pages (from-to)	7412-7419
Number of pages	8
Journal	Advanced Materials
Volume	27
Issue number	45
DOIs	https://doi.org/10.1002/adma.201502404
State	Published - 2 Dec 2015

Keywords

diradicaloid
electrical conductivity
self-doping
thermal activation

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10.1002/adma.201502404

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@article{d1792eec79d5401c9363a31573b82fd7,

title = "Temperature Tunable Self-Doping in Stable Diradicaloid Thin-Film Devices",

abstract = "FDT and FDT-Br diradicaloids with stable coexisting close-shell and open-shell forms exhibit unconventional self-doping behavior in solid-state electronic devices that is temperature (T) tunable and reversible. The doping is strengthened by the increased T, leading to the absence of off-states (Ioff) in the transistors.",

keywords = "diradicaloid, electrical conductivity, self-doping, thermal activation",

author = "Yuan Zhang and Yonghao Zheng and Huiqiong Zhou and Miao, \{Mao Sheng\} and Fred Wudl and Nguyen, \{Thuc Quyen\}",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2015",

month = dec,

day = "2",

doi = "10.1002/adma.201502404",

language = "英语",

volume = "27",

pages = "7412--7419",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "45",

}

TY - JOUR

T1 - Temperature Tunable Self-Doping in Stable Diradicaloid Thin-Film Devices

AU - Zhang, Yuan

AU - Zheng, Yonghao

AU - Zhou, Huiqiong

AU - Miao, Mao Sheng

AU - Wudl, Fred

AU - Nguyen, Thuc Quyen

PY - 2015/12/2

Y1 - 2015/12/2

N2 - FDT and FDT-Br diradicaloids with stable coexisting close-shell and open-shell forms exhibit unconventional self-doping behavior in solid-state electronic devices that is temperature (T) tunable and reversible. The doping is strengthened by the increased T, leading to the absence of off-states (Ioff) in the transistors.

AB - FDT and FDT-Br diradicaloids with stable coexisting close-shell and open-shell forms exhibit unconventional self-doping behavior in solid-state electronic devices that is temperature (T) tunable and reversible. The doping is strengthened by the increased T, leading to the absence of off-states (Ioff) in the transistors.

KW - diradicaloid

KW - electrical conductivity

KW - self-doping

KW - thermal activation

UR - https://www.scopus.com/pages/publications/84949215367

U2 - 10.1002/adma.201502404

DO - 10.1002/adma.201502404

M3 - 文章

AN - SCOPUS:84949215367

SN - 0935-9648

VL - 27

SP - 7412

EP - 7419

JO - Advanced Materials

JF - Advanced Materials

IS - 45

ER -

Temperature Tunable Self-Doping in Stable Diradicaloid Thin-Film Devices

Abstract

Keywords

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