Temperature sensor of high-sensitivity based on nested ring resonator by Vernier effect

Chengcai Tian; Hao Zhang; Wenxiu Li; Xin Huang; Jiaming Liu; Anping Huang; Zhisong Xiao

doi:10.1016/j.ijleo.2019.164118

Temperature sensor of high-sensitivity based on nested ring resonator by Vernier effect

Chengcai Tian
, Hao Zhang
, Wenxiu Li
, Xin Huang
, Jiaming Liu
, Anping Huang
, Zhisong Xiao^*

^*Corresponding author for this work

Beihang University
Beijing Academy of Quantum Information Sciences

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

A temperature sensor based on nested ring resonator (NRR) by Vernier effect is proposed and theoretically demonstrated with larger sensitivity. This configuration, on a standard silicon-on-insulator (SOI) chip, consists of a single ring resonator acting as the reference, and a NRR acting as the sensor, which can simultaneously achieve higher quality factor (Q) and larger free spectrum range (FSR) compared with single ring. By adjusting parameters of the NRR, the sensitivity of the whole structure can be 10.611 nm/K, two orders of magnitude larger than that of the single NRR.

Original language	English
Article number	164118
Journal	Optik
Volume	204
DOIs	https://doi.org/10.1016/j.ijleo.2019.164118
State	Published - Feb 2020

Keywords

Ring resonator
Sensitivity
Silicon-on-insulator
Temperature sensor
Vernier effect

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10.1016/j.ijleo.2019.164118

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title = "Temperature sensor of high-sensitivity based on nested ring resonator by Vernier effect",

abstract = "A temperature sensor based on nested ring resonator (NRR) by Vernier effect is proposed and theoretically demonstrated with larger sensitivity. This configuration, on a standard silicon-on-insulator (SOI) chip, consists of a single ring resonator acting as the reference, and a NRR acting as the sensor, which can simultaneously achieve higher quality factor (Q) and larger free spectrum range (FSR) compared with single ring. By adjusting parameters of the NRR, the sensitivity of the whole structure can be 10.611 nm/K, two orders of magnitude larger than that of the single NRR.",

keywords = "Ring resonator, Sensitivity, Silicon-on-insulator, Temperature sensor, Vernier effect",

author = "Chengcai Tian and Hao Zhang and Wenxiu Li and Xin Huang and Jiaming Liu and Anping Huang and Zhisong Xiao",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier GmbH",

year = "2020",

month = feb,

doi = "10.1016/j.ijleo.2019.164118",

language = "英语",

volume = "204",

journal = "Optik",

issn = "0030-4026",

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TY - JOUR

T1 - Temperature sensor of high-sensitivity based on nested ring resonator by Vernier effect

AU - Tian, Chengcai

AU - Zhang, Hao

AU - Li, Wenxiu

AU - Huang, Xin

AU - Liu, Jiaming

AU - Huang, Anping

AU - Xiao, Zhisong

PY - 2020/2

Y1 - 2020/2

N2 - A temperature sensor based on nested ring resonator (NRR) by Vernier effect is proposed and theoretically demonstrated with larger sensitivity. This configuration, on a standard silicon-on-insulator (SOI) chip, consists of a single ring resonator acting as the reference, and a NRR acting as the sensor, which can simultaneously achieve higher quality factor (Q) and larger free spectrum range (FSR) compared with single ring. By adjusting parameters of the NRR, the sensitivity of the whole structure can be 10.611 nm/K, two orders of magnitude larger than that of the single NRR.

AB - A temperature sensor based on nested ring resonator (NRR) by Vernier effect is proposed and theoretically demonstrated with larger sensitivity. This configuration, on a standard silicon-on-insulator (SOI) chip, consists of a single ring resonator acting as the reference, and a NRR acting as the sensor, which can simultaneously achieve higher quality factor (Q) and larger free spectrum range (FSR) compared with single ring. By adjusting parameters of the NRR, the sensitivity of the whole structure can be 10.611 nm/K, two orders of magnitude larger than that of the single NRR.

KW - Ring resonator

KW - Sensitivity

KW - Silicon-on-insulator

KW - Temperature sensor

KW - Vernier effect

UR - https://www.scopus.com/pages/publications/85077516752

U2 - 10.1016/j.ijleo.2019.164118

DO - 10.1016/j.ijleo.2019.164118

M3 - 文章

AN - SCOPUS:85077516752

SN - 0030-4026

VL - 204

JO - Optik

JF - Optik

M1 - 164118

ER -

Temperature sensor of high-sensitivity based on nested ring resonator by Vernier effect

Abstract

Keywords

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