Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots

Ze Sheng Chen; Ben Ma; Xiang Jun Shang; Yu He; Li Chun Zhang; Hai Qiao Ni; Jin Liang Wang; Zhi Chuan Niu

doi:10.1186/s11671-016-1597-0

Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots

Ze Sheng Chen
, Ben Ma
, Xiang Jun Shang
, Yu He
, Li Chun Zhang
, Hai Qiao Ni
, Jin Liang Wang
, Zhi Chuan Niu^*

^*Corresponding author for this work

School of Physics

Beihang University
CAS - Institute of Semiconductors
University of Science and Technology of China

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Single-photon emission in the telecommunication wavelength band is realized with self-assembled strain-coupled bilayer InAs quantum dots (QDs) embedded in a planar microcavity on GaAs substrate. Low-density large QDs in the upper layer active for ~1.3 μm emission are fabricated by precisely controlling the indium deposition amount and applying a gradient indium flux in both QD layers. Time-resolved photoluminescence (PL) intensity suggested that the radiative lifetime of their exciton emission is 1.5~1.6 ns. The second-order correlation function of g²(0) < 0.5 which demonstrates a pure single-photon emission.

Original language	English
Article number	382
Journal	Nanoscale Research Letters
Volume	11
Issue number	1
DOIs	https://doi.org/10.1186/s11671-016-1597-0
State	Published - 1 Dec 2016

Keywords

Bilayer quantum dot
Single-photon source
Telecommunication wavelength

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10.1186/s11671-016-1597-0

Cite this

@article{673966807ffe4f33812b1a438b1abddf,

title = "Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots",

abstract = "Single-photon emission in the telecommunication wavelength band is realized with self-assembled strain-coupled bilayer InAs quantum dots (QDs) embedded in a planar microcavity on GaAs substrate. Low-density large QDs in the upper layer active for \textasciitilde{}1.3 μm emission are fabricated by precisely controlling the indium deposition amount and applying a gradient indium flux in both QD layers. Time-resolved photoluminescence (PL) intensity suggested that the radiative lifetime of their exciton emission is 1.5\textasciitilde{}1.6 ns. The second-order correlation function of g2(0) < 0.5 which demonstrates a pure single-photon emission.",

keywords = "Bilayer quantum dot, Single-photon source, Telecommunication wavelength",

author = "Chen, \{Ze Sheng\} and Ben Ma and Shang, \{Xiang Jun\} and Yu He and Zhang, \{Li Chun\} and Ni, \{Hai Qiao\} and Wang, \{Jin Liang\} and Niu, \{Zhi Chuan\}",

note = "Publisher Copyright: {\textcopyright} 2016, The Author(s).",

year = "2016",

month = dec,

day = "1",

doi = "10.1186/s11671-016-1597-0",

language = "英语",

volume = "11",

journal = "Nanoscale Research Letters",

issn = "1931-7573",

publisher = "Springer New York",

number = "1",

}

TY - JOUR

T1 - Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots

AU - Chen, Ze Sheng

AU - Ma, Ben

AU - Shang, Xiang Jun

AU - He, Yu

AU - Zhang, Li Chun

AU - Ni, Hai Qiao

AU - Wang, Jin Liang

AU - Niu, Zhi Chuan

PY - 2016/12/1

Y1 - 2016/12/1

N2 - Single-photon emission in the telecommunication wavelength band is realized with self-assembled strain-coupled bilayer InAs quantum dots (QDs) embedded in a planar microcavity on GaAs substrate. Low-density large QDs in the upper layer active for ~1.3 μm emission are fabricated by precisely controlling the indium deposition amount and applying a gradient indium flux in both QD layers. Time-resolved photoluminescence (PL) intensity suggested that the radiative lifetime of their exciton emission is 1.5~1.6 ns. The second-order correlation function of g2(0) < 0.5 which demonstrates a pure single-photon emission.

AB - Single-photon emission in the telecommunication wavelength band is realized with self-assembled strain-coupled bilayer InAs quantum dots (QDs) embedded in a planar microcavity on GaAs substrate. Low-density large QDs in the upper layer active for ~1.3 μm emission are fabricated by precisely controlling the indium deposition amount and applying a gradient indium flux in both QD layers. Time-resolved photoluminescence (PL) intensity suggested that the radiative lifetime of their exciton emission is 1.5~1.6 ns. The second-order correlation function of g2(0) < 0.5 which demonstrates a pure single-photon emission.

KW - Bilayer quantum dot

KW - Single-photon source

KW - Telecommunication wavelength

UR - https://www.scopus.com/pages/publications/84984626900

U2 - 10.1186/s11671-016-1597-0

DO - 10.1186/s11671-016-1597-0

M3 - 文章

AN - SCOPUS:84984626900

SN - 1931-7573

VL - 11

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

IS - 1

M1 - 382

ER -

Telecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots

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Keywords

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