Synthesis, electrical and optical properties of CuNdO 2 compound

Guobo Dong; Ming Zhang; Mei Wang; Fang Tang; Hua Li; Anping Huang; Hui Yan

doi:10.1016/j.jpcs.2012.05.004

Synthesis, electrical and optical properties of CuNdO ₂ compound

Guobo Dong
, Ming Zhang^*
, Mei Wang
, Fang Tang
, Hua Li
, Anping Huang
, Hui Yan

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

CuNdO ₂, a p-type transparent conducting oxide has been synthesized by conventional solid-state reaction. The XRD and TEM results show that the pure delafossite phase is obtained, furthermore, the EDX results indicate the sample is obviously oxygen-rich. The p-type conduction of CuNdO ₂ was confirmed by Hall and Seebeck measurements. Carrier concentration and mobility at room temperature are around 1.38×10 ¹⁷ cm ^-3 and 1.24 cm ²V ^-1s ^-1, respectively. On the other hand, the optical band gap of CuNdO ₂ is estimated to be around 3.14 eV, which agrees well with the theoretical result predicted by the first-principle calculation.

Original language	English
Pages (from-to)	1170-1172
Number of pages	3
Journal	Journal of Physics and Chemistry of Solids
Volume	73
Issue number	9
DOIs	https://doi.org/10.1016/j.jpcs.2012.05.004
State	Published - Sep 2012

Keywords

A. Semiconductors
D. Electrical properties
D. Optical properties

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10.1016/j.jpcs.2012.05.004

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title = "Synthesis, electrical and optical properties of CuNdO 2 compound",

abstract = "CuNdO 2, a p-type transparent conducting oxide has been synthesized by conventional solid-state reaction. The XRD and TEM results show that the pure delafossite phase is obtained, furthermore, the EDX results indicate the sample is obviously oxygen-rich. The p-type conduction of CuNdO 2 was confirmed by Hall and Seebeck measurements. Carrier concentration and mobility at room temperature are around 1.38×10 17 cm -3 and 1.24 cm 2V -1s -1, respectively. On the other hand, the optical band gap of CuNdO 2 is estimated to be around 3.14 eV, which agrees well with the theoretical result predicted by the first-principle calculation.",

keywords = "A. Semiconductors, D. Electrical properties, D. Optical properties",

author = "Guobo Dong and Ming Zhang and Mei Wang and Fang Tang and Hua Li and Anping Huang and Hui Yan",

year = "2012",

month = sep,

doi = "10.1016/j.jpcs.2012.05.004",

language = "英语",

volume = "73",

pages = "1170--1172",

journal = "Journal of Physics and Chemistry of Solids",

issn = "0022-3697",

publisher = "Elsevier Ltd",

number = "9",

}

TY - JOUR

T1 - Synthesis, electrical and optical properties of CuNdO 2 compound

AU - Dong, Guobo

AU - Zhang, Ming

AU - Wang, Mei

AU - Tang, Fang

AU - Li, Hua

AU - Huang, Anping

AU - Yan, Hui

PY - 2012/9

Y1 - 2012/9

N2 - CuNdO 2, a p-type transparent conducting oxide has been synthesized by conventional solid-state reaction. The XRD and TEM results show that the pure delafossite phase is obtained, furthermore, the EDX results indicate the sample is obviously oxygen-rich. The p-type conduction of CuNdO 2 was confirmed by Hall and Seebeck measurements. Carrier concentration and mobility at room temperature are around 1.38×10 17 cm -3 and 1.24 cm 2V -1s -1, respectively. On the other hand, the optical band gap of CuNdO 2 is estimated to be around 3.14 eV, which agrees well with the theoretical result predicted by the first-principle calculation.

AB - CuNdO 2, a p-type transparent conducting oxide has been synthesized by conventional solid-state reaction. The XRD and TEM results show that the pure delafossite phase is obtained, furthermore, the EDX results indicate the sample is obviously oxygen-rich. The p-type conduction of CuNdO 2 was confirmed by Hall and Seebeck measurements. Carrier concentration and mobility at room temperature are around 1.38×10 17 cm -3 and 1.24 cm 2V -1s -1, respectively. On the other hand, the optical band gap of CuNdO 2 is estimated to be around 3.14 eV, which agrees well with the theoretical result predicted by the first-principle calculation.

KW - A. Semiconductors

KW - D. Electrical properties

KW - D. Optical properties

UR - https://www.scopus.com/pages/publications/84862520256

U2 - 10.1016/j.jpcs.2012.05.004

DO - 10.1016/j.jpcs.2012.05.004

M3 - 文章

AN - SCOPUS:84862520256

SN - 0022-3697

VL - 73

SP - 1170

EP - 1172

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 9

ER -

Synthesis, electrical and optical properties of CuNdO ₂ compound

Abstract

Keywords

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