Synthesis and electrical properties of p-CuCr_0.91Mg_0.09O₂/n-Si p-n junction

The p-CuCr_0.91Mg_0.09O₂/n-Si p-n heterogenous junction was synthesized by the radio-frequency magnetron sputtering. The XRD results show that the p-CuCr_0.91Mg_0.09O₂ thin film tends to be oriented on the (012) plane, the positive Hall coefficient confirms p-type nature of the film. The current-voltage characteristic test results show that p-Cu-Cr_0.91Mg_0.09O₂/n-Si heterogenous junction is of obvious rectifying, the ratio of forward current to the reverse current is about 8.2 within the applied voltage range of -5.0 - 5.0 V and the turn-on voltage is about 1.0 V. The p-CuCr_0.91Mg_0.09O₂/n-Si p-n heterogenous junction can be fitted by the theory of p-n⁺ one-sided step junction, the simulated results indicate that the effects of the interface state and series resistance are important factors for the rectifying property of the junction.