Surface modification of single-crystal silicon by hybrid laser treatment

  • Xinxin Li
  • , Zhiquan Cui
  • , Yingchun Guan*
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, recent work on picosecond and nanosecond hybrid laser treatment of mechanically sawed single-crystal silicon wafer is presented. Surface morphology, surface roughness and phase development has been analyzed by 3D laser scanning confocal microscope (LSCM), X-ray diffraction (XRD), and scanning electron microscope (SEM). Results show that as-received surface defects including SiO2 layer and saw-mark defects have been significantly reduced, while average surface roughness has been decreased. No obvious damages such as micro-cracks and micropores have been observed at the laser-treated surface. Moreover, residual stress and electrical resistivity of laser-treated surface has been measured, respectively. The insights obtained in this work provide a facile method to improve surface quality of mechanically machined silicon wafer.

Original languageEnglish
Title of host publication13th International Photonics and OptoElectronics Meetings, POEM 2021
EditorsXinliang Zhang, Perry Shum, Jianji Dong
PublisherSPIE
ISBN (Electronic)9781510651845
DOIs
StatePublished - 2022
Event13th International Photonics and OptoElectronics Meetings, POEM 2021 - Wuhan, China
Duration: 6 Nov 20218 Nov 2021

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume12154
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference13th International Photonics and OptoElectronics Meetings, POEM 2021
Country/TerritoryChina
CityWuhan
Period6/11/218/11/21

Keywords

  • Laser Processing
  • Properties
  • Single-Crystal Silicon Wafer
  • Surface Modification

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