Skip to main navigation Skip to search Skip to main content

Superlattice of FexGe1-x nanodots and nanolayers for spintronics application

  • Tianxiao Nie*
  • , Xufeng Kou
  • , Jianshi Tang
  • , Yabin Fan
  • , Murong Lang
  • , Li Te Chang
  • , Chia Pu Chu
  • , Liang He
  • , Sheng Wei Lee
  • , Faxian Xiu
  • , Jin Zou
  • , Kang L. Wang
  • *Corresponding author for this work
  • University of California at Los Angeles
  • National Central University
  • Fudan University
  • University of Queensland

Research output: Contribution to journal › Article › peer-review

Abstract

FexGe1-x superlattices with two types of nanostructures, i.e. nanodots and nanolayers, were successfully fabricated using low-temperature molecular beam epitaxy. Transmission electron microscopy (TEM) characterization clearly shows that both the FexGe1-x nanodots and nanolayers exhibit a lattice-coherent structure with the surrounding Ge matrix without any metallic precipitations or secondary phases. The magnetic measurement reveals the nature of superparamagnetism in FexGe1-x nanodots, while showing the absence of superparamagnetism in FexGe1-x nanolayers. Magnetotransport measurements show distinct magnetoresistance (MR) behavior, i.e. a negative to positive MR transition in FexGe1-x nanodots and only positive MR in nanolayers, which could be due to a competition between the orbital MR and spin-dependent scatterings. Our results open a new growth strategy for engineering FexGe1-x nanostructures to facilitate the development of Ge-based spintronics and magnetoelectronics devices.

Original languageEnglish
Article number505702
JournalNanotechnology
Volume25
Issue number50
DOIs
StatePublished - 19 Dec 2014
Externally publishedYes

Keywords

  • Electron microscopy
  • FeGe superlattice
  • Magnetoresistance
  • Molecular beam epitaxy
  • Nanodot
  • Nanolay

Fingerprint

Dive into the research topics of 'Superlattice of FexGe1-x nanodots and nanolayers for spintronics application'. Together they form a unique fingerprint.

Cite this