Study on variable capacitance diode of (p)nc-Si:H/(n)c-Si heterojunction

Wei Wensheng; Wang Tianmin; Zhang Chunxi; Li Guohua; Li Yuexia

doi:10.1016/S0042-207X(03)00034-4

Study on variable capacitance diode of (p)nc-Si:H/(n)c-Si heterojunction

Wei Wensheng^*
, Wang Tianmin
, Zhang Chunxi
, Li Guohua
, Li Yuexia

^*Corresponding author for this work

School of Instrumentation and Optoelectronic Engineering

Beihang University
CAS - Institute of Semiconductors

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Hydrogenated nanocrystalline silicon (nc-Si:H) layers of boron-doped increasing step by step was deposited on n-type crystalline silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) system. After evaporating Ohm contact electrode on the side of substrate and on the side of nc-Si:H film, a structure of electrode/(p)nc-Si:H/(n)c-Si/electrode was obtained. It is confirmed by electrical measurement such as I-V curve, C-V curve and DLTS that this is a variable capacitance diode.

Original language	English
Pages (from-to)	465-469
Number of pages	5
Journal	Vacuum
Volume	71
Issue number	4
DOIs	https://doi.org/10.1016/S0042-207X(03)00034-4
State	Published - 25 Jul 2003

Keywords

(p)nc-Si:H/(n)c-Si heterojunction
Variable capacitance diode
nc-Si:H film

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10.1016/S0042-207X(03)00034-4

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title = "Study on variable capacitance diode of (p)nc-Si:H/(n)c-Si heterojunction",

abstract = "Hydrogenated nanocrystalline silicon (nc-Si:H) layers of boron-doped increasing step by step was deposited on n-type crystalline silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) system. After evaporating Ohm contact electrode on the side of substrate and on the side of nc-Si:H film, a structure of electrode/(p)nc-Si:H/(n)c-Si/electrode was obtained. It is confirmed by electrical measurement such as I-V curve, C-V curve and DLTS that this is a variable capacitance diode.",

keywords = "(p)nc-Si:H/(n)c-Si heterojunction, Variable capacitance diode, nc-Si:H film",

author = "Wei Wensheng and Wang Tianmin and Zhang Chunxi and Li Guohua and Li Yuexia",

year = "2003",

month = jul,

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doi = "10.1016/S0042-207X(03)00034-4",

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pages = "465--469",

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TY - JOUR

T1 - Study on variable capacitance diode of (p)nc-Si:H/(n)c-Si heterojunction

AU - Wensheng, Wei

AU - Tianmin, Wang

AU - Chunxi, Zhang

AU - Guohua, Li

AU - Yuexia, Li

PY - 2003/7/25

Y1 - 2003/7/25

N2 - Hydrogenated nanocrystalline silicon (nc-Si:H) layers of boron-doped increasing step by step was deposited on n-type crystalline silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) system. After evaporating Ohm contact electrode on the side of substrate and on the side of nc-Si:H film, a structure of electrode/(p)nc-Si:H/(n)c-Si/electrode was obtained. It is confirmed by electrical measurement such as I-V curve, C-V curve and DLTS that this is a variable capacitance diode.

AB - Hydrogenated nanocrystalline silicon (nc-Si:H) layers of boron-doped increasing step by step was deposited on n-type crystalline silicon substrate using Plasma Enhanced Chemical Vapor Deposition (PECVD) system. After evaporating Ohm contact electrode on the side of substrate and on the side of nc-Si:H film, a structure of electrode/(p)nc-Si:H/(n)c-Si/electrode was obtained. It is confirmed by electrical measurement such as I-V curve, C-V curve and DLTS that this is a variable capacitance diode.

KW - (p)nc-Si:H/(n)c-Si heterojunction

KW - Variable capacitance diode

KW - nc-Si:H film

UR - https://www.scopus.com/pages/publications/0038790371

U2 - 10.1016/S0042-207X(03)00034-4

DO - 10.1016/S0042-207X(03)00034-4

M3 - 文章

AN - SCOPUS:0038790371

SN - 0042-207X

VL - 71

SP - 465

EP - 469

JO - Vacuum

JF - Vacuum

IS - 4

ER -

Study on variable capacitance diode of (p)nc-Si:H/(n)c-Si heterojunction

Abstract

Keywords

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