Study on optical band GAP of boron-doped NC-SI:H film

Wei Wensheng; Wang Tianmin; Zhang Chunxi; Li Guohua; Han Hexiang; Ding Kun

Study on optical band GAP of boron-doped NC-SI:H film

Wei Wensheng^*
, Wang Tianmin
, Zhang Chunxi
, Li Guohua
, Han Hexiang
, Ding Kun

^*Corresponding author for this work

School of Instrumentation and Optoelectronic Engineering

Beihang University
CAS - Institute of Semiconductors

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The optical band gap (E_g) of the boron (B)-doped hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated using plasma enhanced chemical vapor deposition (PECVD) was investigated in this work. The transmittance of the films were measured by spectrophotometric and the E_g was evaluated utilizing three different relations for comparison, namely: αhv=C(hv-E_g)³, αhv=B₀(hv- E_g)², 7alpha;hv=C₀(hv-E_g)². Result showed that E_g decreases with the increasing of Boron doping ratio, hydrogen concentration, and substrate's temperature (Ts), respectively. E_g raises up with rf power density (P_d) from 0.45W.cm^-2 to 0.60w.cm^-2 and then drops to the end. These can be explained for E_g decreases with disorder in the films.

Original language	English
Pages (from-to)	4327-4330
Number of pages	4
Journal	International Journal of Modern Physics B
Volume	16
Issue number	28-29
State	Published - 20 Nov 2002

Cite this

@article{28d3d85ff93447f18e77425787f0ce25,

title = "Study on optical band GAP of boron-doped NC-SI:H film",

abstract = "The optical band gap (Eg) of the boron (B)-doped hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated using plasma enhanced chemical vapor deposition (PECVD) was investigated in this work. The transmittance of the films were measured by spectrophotometric and the Eg was evaluated utilizing three different relations for comparison, namely: αhv=C(hv-Eg)3, αhv=B0(hv- Eg)2, 7alpha;hv=C0(hv-Eg)2. Result showed that Eg decreases with the increasing of Boron doping ratio, hydrogen concentration, and substrate's temperature (Ts), respectively. Eg raises up with rf power density (Pd) from 0.45W.cm-2 to 0.60w.cm-2 and then drops to the end. These can be explained for Eg decreases with disorder in the films.",

author = "Wei Wensheng and Wang Tianmin and Zhang Chunxi and Li Guohua and Han Hexiang and Ding Kun",

year = "2002",

month = nov,

day = "20",

language = "英语",

volume = "16",

pages = "4327--4330",

journal = "International Journal of Modern Physics B",

issn = "0217-9792",

publisher = "World Scientific",

number = "28-29",

}

TY - JOUR

T1 - Study on optical band GAP of boron-doped NC-SI:H film

AU - Wensheng, Wei

AU - Tianmin, Wang

AU - Chunxi, Zhang

AU - Guohua, Li

AU - Hexiang, Han

AU - Kun, Ding

PY - 2002/11/20

Y1 - 2002/11/20

N2 - The optical band gap (Eg) of the boron (B)-doped hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated using plasma enhanced chemical vapor deposition (PECVD) was investigated in this work. The transmittance of the films were measured by spectrophotometric and the Eg was evaluated utilizing three different relations for comparison, namely: αhv=C(hv-Eg)3, αhv=B0(hv- Eg)2, 7alpha;hv=C0(hv-Eg)2. Result showed that Eg decreases with the increasing of Boron doping ratio, hydrogen concentration, and substrate's temperature (Ts), respectively. Eg raises up with rf power density (Pd) from 0.45W.cm-2 to 0.60w.cm-2 and then drops to the end. These can be explained for Eg decreases with disorder in the films.

AB - The optical band gap (Eg) of the boron (B)-doped hydrogenated nano-crystalline silicon (nc-Si:H) films fabricated using plasma enhanced chemical vapor deposition (PECVD) was investigated in this work. The transmittance of the films were measured by spectrophotometric and the Eg was evaluated utilizing three different relations for comparison, namely: αhv=C(hv-Eg)3, αhv=B0(hv- Eg)2, 7alpha;hv=C0(hv-Eg)2. Result showed that Eg decreases with the increasing of Boron doping ratio, hydrogen concentration, and substrate's temperature (Ts), respectively. Eg raises up with rf power density (Pd) from 0.45W.cm-2 to 0.60w.cm-2 and then drops to the end. These can be explained for Eg decreases with disorder in the films.

UR - https://www.scopus.com/pages/publications/0037146210

M3 - 文章

AN - SCOPUS:0037146210

SN - 0217-9792

VL - 16

SP - 4327

EP - 4330

JO - International Journal of Modern Physics B

JF - International Journal of Modern Physics B

IS - 28-29

ER -

Study on optical band GAP of boron-doped NC-SI:H film

Abstract

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