Study on intrinsic stress of nc-Si:H film

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	285
Number of pages	1
Journal	Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices
Volume	9
Issue number	3
State	Published - Sep 2003

Cite this

@article{d0fac9cddae24656810f4cd8b6d86047,

title = "Study on intrinsic stress of nc-Si:H film",

author = "Wei, \{Wen Sheng\} and Wang, \{Tian Min\} and Zhang, \{Chun Xi\} and Li, \{Guo Hua\} and Han, \{He Xiang\} and Kun Ding",

year = "2003",

month = sep,

language = "英语",

volume = "9",

pages = "285",

journal = "Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices",

issn = "1007-4252",

publisher = "Chinese Academy of Sciences",

number = "3",

}

TY - JOUR

T1 - Study on intrinsic stress of nc-Si:H film

AU - Wei, Wen Sheng

AU - Wang, Tian Min

AU - Zhang, Chun Xi

AU - Li, Guo Hua

AU - Han, He Xiang

AU - Ding, Kun

PY - 2003/9

Y1 - 2003/9

UR - https://www.scopus.com/pages/publications/0142090167

M3 - 文章

AN - SCOPUS:0142090167

SN - 1007-4252

VL - 9

SP - 285

JO - Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices

JF - Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices

IS - 3

ER -