Study on electrical transport mechanism of doped NC-Si:H film

Tianmini Wang; Wensheng Wei; Gangyi Xu; Chunxi Zhang

doi:10.1142/s0217979202015285

Study on electrical transport mechanism of doped NC-Si:H film

Tianmini Wang
, Wensheng Wei^*
, Gangyi Xu
, Chunxi Zhang

^*Corresponding author for this work

School of Instrumentation and Optoelectronic Engineering

Beihang University
Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Intrinsic, P-doped and B-doped hydrogenated nanocrystalline silicon (nc-Si:H) films were fabricated using plasma enhanced chemical vapor deposition (PECVD) system. It's microstructures were characterized by HRTEM. Electrical transport mechanism of nc-Si:H film was investigated: Tunneling effect of electrode/(p)nc-Si:H/(n)c-Si/electrode were electrically characterized. Electronic transport was governed by thermal-assisted tunneling within around 100K-600K and electrons hopping through the local states near the Fermi-level was existed simultaneously under 100K.

Original language	English
Pages (from-to)	4289-4293
Number of pages	5
Journal	International Journal of Modern Physics B
Volume	16
Issue number	28-29
DOIs	https://doi.org/10.1142/s0217979202015285
State	Published - 20 Nov 2002

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title = "Study on electrical transport mechanism of doped NC-Si:H film",

abstract = "Intrinsic, P-doped and B-doped hydrogenated nanocrystalline silicon (nc-Si:H) films were fabricated using plasma enhanced chemical vapor deposition (PECVD) system. It's microstructures were characterized by HRTEM. Electrical transport mechanism of nc-Si:H film was investigated: Tunneling effect of electrode/(p)nc-Si:H/(n)c-Si/electrode were electrically characterized. Electronic transport was governed by thermal-assisted tunneling within around 100K-600K and electrons hopping through the local states near the Fermi-level was existed simultaneously under 100K.",

author = "Tianmini Wang and Wensheng Wei and Gangyi Xu and Chunxi Zhang",

year = "2002",

month = nov,

day = "20",

doi = "10.1142/s0217979202015285",

language = "英语",

volume = "16",

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journal = "International Journal of Modern Physics B",

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T1 - Study on electrical transport mechanism of doped NC-Si:H film

AU - Wang, Tianmini

AU - Wei, Wensheng

AU - Xu, Gangyi

AU - Zhang, Chunxi

PY - 2002/11/20

Y1 - 2002/11/20

N2 - Intrinsic, P-doped and B-doped hydrogenated nanocrystalline silicon (nc-Si:H) films were fabricated using plasma enhanced chemical vapor deposition (PECVD) system. It's microstructures were characterized by HRTEM. Electrical transport mechanism of nc-Si:H film was investigated: Tunneling effect of electrode/(p)nc-Si:H/(n)c-Si/electrode were electrically characterized. Electronic transport was governed by thermal-assisted tunneling within around 100K-600K and electrons hopping through the local states near the Fermi-level was existed simultaneously under 100K.

AB - Intrinsic, P-doped and B-doped hydrogenated nanocrystalline silicon (nc-Si:H) films were fabricated using plasma enhanced chemical vapor deposition (PECVD) system. It's microstructures were characterized by HRTEM. Electrical transport mechanism of nc-Si:H film was investigated: Tunneling effect of electrode/(p)nc-Si:H/(n)c-Si/electrode were electrically characterized. Electronic transport was governed by thermal-assisted tunneling within around 100K-600K and electrons hopping through the local states near the Fermi-level was existed simultaneously under 100K.

UR - https://www.scopus.com/pages/publications/0037146237

U2 - 10.1142/s0217979202015285

DO - 10.1142/s0217979202015285

M3 - 文章

AN - SCOPUS:0037146237

SN - 0217-9792

VL - 16

SP - 4289

EP - 4293

JO - International Journal of Modern Physics B

JF - International Journal of Modern Physics B

IS - 28-29

ER -

Study on electrical transport mechanism of doped NC-Si:H film

Abstract

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