Abstract
The mixing effect of three different film/substrate systems, Ti/Al, Al/Ti and Ni/Ti, which were irradiated by intense pulsed ion beam, was studied with Rutherford backscattering spectroscopy (RBS). It was found that a quite well mixed layer with gradient components was formed in Ni/Ti combination. The thickness of the mixing layer is far beyond the ion range. They were mixed probably in molten state. It was also found that the mixing degree strongly related to the difference of the melting points of film/substrate couple, as well as the difference of the surface tensions.
| Original language | English |
|---|---|
| Pages (from-to) | 125-128 |
| Number of pages | 4 |
| Journal | He Jishu/Nuclear Techniques |
| Volume | 29 |
| Issue number | 2 |
| State | Published - Feb 2006 |
Keywords
- Intense pulsed ion beam
- Ion beam mixing
- Rutherford backscattering spectroscopy
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