Abstract
To enhance signal transmission speed and reduce signal attenuation, the glass used for electronic packaging must have a low dielectric constant. This study explores the impact of increasing B2O3 content on the structure and performance of low-dielectric sealing glasses. Structural analysis shows that an increase in B2O3 content leads to the gradual replacement of [SiO4] units by [BO3] units in the sealing glass, and the porosity inside the sealing glass increases gradually. This results in a more loose structure, thereby effectively reducing the dielectric constant and improving its wettability on Kovar alloy. The sealing glass with a SiO2/B2O3 ratio of 1.71 exhibits the optimal performance: it has a dielectric constant of approximately 3.38 in the Ku band (12–17.5 GHz), a shear strength of 3.306 MPa on Kovar alloy, and a weight loss rate of 0.00204 g·cm-2 after being immersed in water at 90 °C for 12 h. While maintaining a low dielectric constant, it also possesses favorable thermal, mechanical, and water-resistant properties. This study provides a practical solution for designing high-performance sealing glasses for high-frequency microelectronics applications.
| Original language | English |
|---|---|
| Article number | 123949 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 676 |
| DOIs | |
| State | Published - 1 Mar 2026 |
| Externally published | Yes |
Keywords
- 4J29 Kovar alloy
- Dielectric constant
- Sealing glass
- Thermal properties
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