@inproceedings{d073322739fa4c88902cc6ed1af7eddf,
title = "Structure design and characteristics of 3T sense-switch pFlash for computing-in-memory",
abstract = "In this paper, we propose a novel structure for a 3T sense-switch pFlash (SSpF) that is specially designed for computing-in-memory. By leveraging the effect of programming pulse width modulation, the 3T-SSpF can be adjusted to more than a hundred conductance states. Furthermore, the conductance level and conductance variation of a 256k 3T-SSpF array are evaluated, and a typical neural network is implemented and applied to the MNIST and CIFAR-10 datasets. The network shows reasonable performance, with a loss of accuracy less than 1\%; this approach will therefore enable the realization of more accurate NVM-based neural networks for edge inference.",
keywords = "Computing-in-memory, Flash, NVM",
author = "Wei Zhao and Jinghe Wei and Guozhu Liu and Yidan Wei and Yingqiang Wei and Zhiyuan Sui and Meijie Liu and Qi Xi and Xinhe Wang and Zongguang Yu and Juyan Xu",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025 ; Conference date: 09-03-2025 Through 12-03-2025",
year = "2025",
doi = "10.1109/EDTM61175.2025.11040759",
language = "英语",
series = "9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "9th IEEE Electron Devices Technology and Manufacturing Conference",
address = "美国",
}