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Structural and physical properties of Mg-doped CuAlO2 thin films

  • Guobo Dong
  • , Ming Zhang*
  • , Wei Lan
  • , Peiming Dong
  • , Hui Yan
  • *Corresponding author for this work
  • Beijing University of Technology
  • Lanzhou University

Research output: Contribution to journalArticlepeer-review

Abstract

The CuAl1-xMgxO2 (x = 0, 0.01, 0.02 and 0.05) thin films were successfully deposited on quartz substrate by using the RF magnetron sputtering technique. XRD patterns indicate that the delafossite structure could be guaranteed for all CuAl1-xMgxO2 films. The conductivity measured at room temperature for CuAl0.98Mg0.02O2 film is three orders of magnitude higher than that of undoped CuAlO2 film and the band gaps of CuAl1-xMgxO2 (x = 0, 0.01, 0.02 and 0.05) thin films decrease with the increase of the doping concentration, which is related to the formation of impurity energy levels with increasing the doping concentration.

Original languageEnglish
Pages (from-to)1321-1324
Number of pages4
JournalVacuum
Volume82
Issue number11
DOIs
StatePublished - 19 Jun 2008
Externally publishedYes

Keywords

  • Band gap
  • Conductivity
  • CuAlO films
  • Doping concentrations

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