Abstract
The CuAl1-xMgxO2 (x = 0, 0.01, 0.02 and 0.05) thin films were successfully deposited on quartz substrate by using the RF magnetron sputtering technique. XRD patterns indicate that the delafossite structure could be guaranteed for all CuAl1-xMgxO2 films. The conductivity measured at room temperature for CuAl0.98Mg0.02O2 film is three orders of magnitude higher than that of undoped CuAlO2 film and the band gaps of CuAl1-xMgxO2 (x = 0, 0.01, 0.02 and 0.05) thin films decrease with the increase of the doping concentration, which is related to the formation of impurity energy levels with increasing the doping concentration.
| Original language | English |
|---|---|
| Pages (from-to) | 1321-1324 |
| Number of pages | 4 |
| Journal | Vacuum |
| Volume | 82 |
| Issue number | 11 |
| DOIs | |
| State | Published - 19 Jun 2008 |
| Externally published | Yes |
Keywords
- Band gap
- Conductivity
- CuAlO films
- Doping concentrations
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