Structural and photoluminescence properties of In0.9(Ga/Al)0.1As self-assembled quantum dots on InP substrate

Zhong Zhe Sun; Ju Wu; Feng Qi Liu; Huai Zhe Xu; Yong Hai Chen; Xiao Ling Ye; Wei Hong Jiang; Bo Xu; Zhan Guo Wang

doi:10.1063/1.373691

Structural and photoluminescence properties of In_0.9(Ga/Al)_0.1As self-assembled quantum dots on InP substrate

Zhong Zhe Sun^*
, Ju Wu
, Feng Qi Liu
, Huai Zhe Xu
, Yong Hai Chen
, Xiao Ling Ye
, Wei Hong Jiang
, Bo Xu
, Zhan Guo Wang

^*Corresponding author for this work

CAS - Institute of Semiconductors

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Self-assembled In_0.9Ga_0.1As, In_0.9Al_0.1As, and InAs quantum dots (QD) were fabricated in an InAlAs matrix lattice-matched to an InP substrate by molecular beam epitaxy. Preliminary characterizations were performed using transmission electron microscopy, photoluminescence, and reflection high-energy electron diffraction. Experimental results reveal clear differences in QD formation, size distribution, and luminescence between the InAs and In_0.9(Ga/Al)_0.1 As samples, which show the potential of introducing ternary compositions to adjust the structural and optical properties of QDs on an InP substrate.

Original language	English
Pages (from-to)	533-536
Number of pages	4
Journal	Journal of Applied Physics
Volume	88
Issue number	1
DOIs	https://doi.org/10.1063/1.373691
State	Published - Jul 2000
Externally published	Yes

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@article{c79eb22220f04f59ba2f0da6e22b92c3,

title = "Structural and photoluminescence properties of In0.9(Ga/Al)0.1As self-assembled quantum dots on InP substrate",

abstract = "Self-assembled In0.9Ga0.1As, In0.9Al0.1As, and InAs quantum dots (QD) were fabricated in an InAlAs matrix lattice-matched to an InP substrate by molecular beam epitaxy. Preliminary characterizations were performed using transmission electron microscopy, photoluminescence, and reflection high-energy electron diffraction. Experimental results reveal clear differences in QD formation, size distribution, and luminescence between the InAs and In0.9(Ga/Al)0.1 As samples, which show the potential of introducing ternary compositions to adjust the structural and optical properties of QDs on an InP substrate.",

author = "Sun, \{Zhong Zhe\} and Ju Wu and Liu, \{Feng Qi\} and Xu, \{Huai Zhe\} and Chen, \{Yong Hai\} and Ye, \{Xiao Ling\} and Jiang, \{Wei Hong\} and Bo Xu and Wang, \{Zhan Guo\}",

year = "2000",

month = jul,

doi = "10.1063/1.373691",

language = "英语",

volume = "88",

pages = "533--536",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Structural and photoluminescence properties of In0.9(Ga/Al)0.1As self-assembled quantum dots on InP substrate

AU - Sun, Zhong Zhe

AU - Wu, Ju

AU - Liu, Feng Qi

AU - Xu, Huai Zhe

AU - Chen, Yong Hai

AU - Ye, Xiao Ling

AU - Jiang, Wei Hong

AU - Xu, Bo

AU - Wang, Zhan Guo

PY - 2000/7

Y1 - 2000/7

N2 - Self-assembled In0.9Ga0.1As, In0.9Al0.1As, and InAs quantum dots (QD) were fabricated in an InAlAs matrix lattice-matched to an InP substrate by molecular beam epitaxy. Preliminary characterizations were performed using transmission electron microscopy, photoluminescence, and reflection high-energy electron diffraction. Experimental results reveal clear differences in QD formation, size distribution, and luminescence between the InAs and In0.9(Ga/Al)0.1 As samples, which show the potential of introducing ternary compositions to adjust the structural and optical properties of QDs on an InP substrate.

AB - Self-assembled In0.9Ga0.1As, In0.9Al0.1As, and InAs quantum dots (QD) were fabricated in an InAlAs matrix lattice-matched to an InP substrate by molecular beam epitaxy. Preliminary characterizations were performed using transmission electron microscopy, photoluminescence, and reflection high-energy electron diffraction. Experimental results reveal clear differences in QD formation, size distribution, and luminescence between the InAs and In0.9(Ga/Al)0.1 As samples, which show the potential of introducing ternary compositions to adjust the structural and optical properties of QDs on an InP substrate.

UR - https://www.scopus.com/pages/publications/0041687528

U2 - 10.1063/1.373691

DO - 10.1063/1.373691

M3 - 文章

AN - SCOPUS:0041687528

SN - 0021-8979

VL - 88

SP - 533

EP - 536

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Structural and photoluminescence properties of In_0.9(Ga/Al)_0.1As self-assembled quantum dots on InP substrate

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