Structural and optical properties of self-assembled InAs quantum dots grown on GaAs (311) a substrate

Wei Hong Jiang; Huai Zhe Xu; Qian Gong; Bo Xu; Ji Zheng Wang; Wei Zhou; Ji Ben Liang; Zhan Guo Wang

Structural and optical properties of self-assembled InAs quantum dots grown on GaAs (311) a substrate

Wei Hong Jiang^*
, Huai Zhe Xu
, Qian Gong
, Bo Xu
, Ji Zheng Wang
, Wei Zhou
, Ji Ben Liang
, Zhan Guo Wang

^*Corresponding author for this work

CAS - Institute of Semiconductors

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We report the structural and optical characteristics of InAs quantum dots (QDs) grown on GaAs (311) A substrates. Atomic force microscopic result shows that QDs on (311) A surface exhibit a nonconventional, faceted, arrowhead-like shapes aligned in the [233] direction. The photoluminescence (PL) intensity, peak position and the full width at half rnaxinum (FWHM) are all closely related to the measurement temperature. The fast redshift of PL energy and monotonous decrease of linewidth with increasing temperature were observed and explained by carriers being thermally activated to the barrier produced by the wetting layer and then being retrapped and recombined in energetically lower-lying QDs states. This model explains our results well.

Original language	English
Pages (from-to)	1545
Number of pages	1
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	48
Issue number	8
State	Published - Aug 1999
Externally published	Yes

Cite this

@article{9495ee0b14b54d6d93ab87054971853b,

title = "Structural and optical properties of self-assembled InAs quantum dots grown on GaAs (311) a substrate",

abstract = "We report the structural and optical characteristics of InAs quantum dots (QDs) grown on GaAs (311) A substrates. Atomic force microscopic result shows that QDs on (311) A surface exhibit a nonconventional, faceted, arrowhead-like shapes aligned in the [233] direction. The photoluminescence (PL) intensity, peak position and the full width at half rnaxinum (FWHM) are all closely related to the measurement temperature. The fast redshift of PL energy and monotonous decrease of linewidth with increasing temperature were observed and explained by carriers being thermally activated to the barrier produced by the wetting layer and then being retrapped and recombined in energetically lower-lying QDs states. This model explains our results well.",

author = "Jiang, \{Wei Hong\} and Xu, \{Huai Zhe\} and Qian Gong and Bo Xu and Wang, \{Ji Zheng\} and Wei Zhou and Liang, \{Ji Ben\} and Wang, \{Zhan Guo\}",

year = "1999",

month = aug,

language = "英语",

volume = "48",

pages = "1545",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences",

number = "8",

}

TY - JOUR

T1 - Structural and optical properties of self-assembled InAs quantum dots grown on GaAs (311) a substrate

AU - Jiang, Wei Hong

AU - Xu, Huai Zhe

AU - Gong, Qian

AU - Xu, Bo

AU - Wang, Ji Zheng

AU - Zhou, Wei

AU - Liang, Ji Ben

AU - Wang, Zhan Guo

PY - 1999/8

Y1 - 1999/8

N2 - We report the structural and optical characteristics of InAs quantum dots (QDs) grown on GaAs (311) A substrates. Atomic force microscopic result shows that QDs on (311) A surface exhibit a nonconventional, faceted, arrowhead-like shapes aligned in the [233] direction. The photoluminescence (PL) intensity, peak position and the full width at half rnaxinum (FWHM) are all closely related to the measurement temperature. The fast redshift of PL energy and monotonous decrease of linewidth with increasing temperature were observed and explained by carriers being thermally activated to the barrier produced by the wetting layer and then being retrapped and recombined in energetically lower-lying QDs states. This model explains our results well.

AB - We report the structural and optical characteristics of InAs quantum dots (QDs) grown on GaAs (311) A substrates. Atomic force microscopic result shows that QDs on (311) A surface exhibit a nonconventional, faceted, arrowhead-like shapes aligned in the [233] direction. The photoluminescence (PL) intensity, peak position and the full width at half rnaxinum (FWHM) are all closely related to the measurement temperature. The fast redshift of PL energy and monotonous decrease of linewidth with increasing temperature were observed and explained by carriers being thermally activated to the barrier produced by the wetting layer and then being retrapped and recombined in energetically lower-lying QDs states. This model explains our results well.

UR - https://www.scopus.com/pages/publications/0042764028

M3 - 文章

AN - SCOPUS:0042764028

SN - 1000-3290

VL - 48

SP - 1545

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 8

ER -

Structural and optical properties of self-assembled InAs quantum dots grown on GaAs (311) a substrate

Abstract

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