Strong enhancement of ultra-violet emission by CE doping of ZnO sputtered films

C. L. Heng; T. Wang; H. Li; J. J. Liu; J. W. Zhu; A. Ablimit; W. Y. Su; H. C. Wu; P. G. Yin; T. G. Finstad

doi:10.1016/j.matlet.2015.09.125

Strong enhancement of ultra-violet emission by CE doping of ZnO sputtered films

C. L. Heng
, T. Wang
, H. Li
, J. J. Liu
, J. W. Zhu
, A. Ablimit
, W. Y. Su
, H. C. Wu
, P. G. Yin
, T. G. Finstad^*

^*Corresponding author for this work

School of Chemistry

Beijing Institute of Technology
University of Oslo

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We report that ultra-violet (UV) emission of ZnO can be made much more intense by incorporating Ce in the ZnO films. After annealing at 1100 °C in N₂ gas, the UV peak (≈3.34 eV, width 133 meV) - intensity for the film doped with Ce is two order of magnitude stronger than that of un-doped ZnO films. The large enhancement is correlated with improved crystallinity and appears due to fewer non-radiative recombination pathways. The improved crystallinity can be related to Ce affecting the self-texturing of ZnO during sputter deposition and annealing.

Original language	English
Pages (from-to)	53-55
Number of pages	3
Journal	Materials Letters
Volume	162
DOIs	https://doi.org/10.1016/j.matlet.2015.09.125
State	Published - 1 Jan 2016

Keywords

Ce
Texture
Thin film
UV Luminescence
ZnO

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10.1016/j.matlet.2015.09.125

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title = "Strong enhancement of ultra-violet emission by CE doping of ZnO sputtered films",

abstract = "We report that ultra-violet (UV) emission of ZnO can be made much more intense by incorporating Ce in the ZnO films. After annealing at 1100 °C in N2 gas, the UV peak (≈3.34 eV, width 133 meV) - intensity for the film doped with Ce is two order of magnitude stronger than that of un-doped ZnO films. The large enhancement is correlated with improved crystallinity and appears due to fewer non-radiative recombination pathways. The improved crystallinity can be related to Ce affecting the self-texturing of ZnO during sputter deposition and annealing.",

keywords = "Ce, Texture, Thin film, UV Luminescence, ZnO",

author = "Heng, \{C. L.\} and T. Wang and H. Li and Liu, \{J. J.\} and Zhu, \{J. W.\} and A. Ablimit and Su, \{W. Y.\} and Wu, \{H. C.\} and Yin, \{P. G.\} and Finstad, \{T. G.\}",

year = "2016",

month = jan,

day = "1",

doi = "10.1016/j.matlet.2015.09.125",

language = "英语",

volume = "162",

pages = "53--55",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Strong enhancement of ultra-violet emission by CE doping of ZnO sputtered films

AU - Heng, C. L.

AU - Wang, T.

AU - Li, H.

AU - Liu, J. J.

AU - Zhu, J. W.

AU - Ablimit, A.

AU - Su, W. Y.

AU - Wu, H. C.

AU - Yin, P. G.

AU - Finstad, T. G.

PY - 2016/1/1

Y1 - 2016/1/1

N2 - We report that ultra-violet (UV) emission of ZnO can be made much more intense by incorporating Ce in the ZnO films. After annealing at 1100 °C in N2 gas, the UV peak (≈3.34 eV, width 133 meV) - intensity for the film doped with Ce is two order of magnitude stronger than that of un-doped ZnO films. The large enhancement is correlated with improved crystallinity and appears due to fewer non-radiative recombination pathways. The improved crystallinity can be related to Ce affecting the self-texturing of ZnO during sputter deposition and annealing.

AB - We report that ultra-violet (UV) emission of ZnO can be made much more intense by incorporating Ce in the ZnO films. After annealing at 1100 °C in N2 gas, the UV peak (≈3.34 eV, width 133 meV) - intensity for the film doped with Ce is two order of magnitude stronger than that of un-doped ZnO films. The large enhancement is correlated with improved crystallinity and appears due to fewer non-radiative recombination pathways. The improved crystallinity can be related to Ce affecting the self-texturing of ZnO during sputter deposition and annealing.

KW - Ce

KW - Texture

KW - Thin film

KW - UV Luminescence

KW - ZnO

UR - https://www.scopus.com/pages/publications/84943410553

U2 - 10.1016/j.matlet.2015.09.125

DO - 10.1016/j.matlet.2015.09.125

M3 - 文章

AN - SCOPUS:84943410553

SN - 0167-577X

VL - 162

SP - 53

EP - 55

JO - Materials Letters

JF - Materials Letters

ER -

Strong enhancement of ultra-violet emission by CE doping of ZnO sputtered films

Abstract

Keywords

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