TY - GEN
T1 - Statistical Device Modeling with Arbitrary Model-Parameter Distribution via Markov Chain Monte Carlo
AU - Tsukamoto, Hiroki
AU - Bian, Song
AU - Sato, Takashi
N1 - Publisher Copyright:
© 2021 IEEE.
PY - 2021/9/27
Y1 - 2021/9/27
N2 - We propose a novel statistical device modeling methodology that can represent model-parameters of arbitrary distribution and correlation. The proposed modeling is based on Markov chain Monte Carlo method in which random samples are drawn from the target probability distribution. The proposed method is also independent of the device models, allowing us to apply the method for any device models. Through the validation, the proposed method successfully reproduced the two peaks of the model parameter distribution that generated the current distribution. In addition, the experiments on the measured current variations following a non-Gaussian distribution demonstrate that the proposed method reduced the modeling error significantly as compared to the conventional method that can only use normal distribution.
AB - We propose a novel statistical device modeling methodology that can represent model-parameters of arbitrary distribution and correlation. The proposed modeling is based on Markov chain Monte Carlo method in which random samples are drawn from the target probability distribution. The proposed method is also independent of the device models, allowing us to apply the method for any device models. Through the validation, the proposed method successfully reproduced the two peaks of the model parameter distribution that generated the current distribution. In addition, the experiments on the measured current variations following a non-Gaussian distribution demonstrate that the proposed method reduced the modeling error significantly as compared to the conventional method that can only use normal distribution.
KW - device process variation
KW - power MOSFET
KW - statistical device modeling
UR - https://www.scopus.com/pages/publications/85119452947
U2 - 10.1109/SISPAD54002.2021.9592558
DO - 10.1109/SISPAD54002.2021.9592558
M3 - 会议稿件
AN - SCOPUS:85119452947
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 192
EP - 196
BT - SISPAD 2021 - 2021 International Conference on Simulation of Semiconductor Processes and Devices, Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 26th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2021
Y2 - 27 September 2021 through 29 September 2021
ER -