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SpinLiM: Spin Orbit Torque Memory for Ternary Neural Networks Based on the Logic-in-Memory Architecture

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Logic-in-memory architecture based on spintronic memories shows fascinating prospects in neural networks (NNs) for its high energy efficiency and good endurance. In this work, we leveraged two magnetic tunnel junctions (MTJs), which are driven by the interplay of field-free spin orbit torque (SOT) and spin transfer torque (STT) effects, to achieve a novel statefullogic-in-memory paradigm for ternary multiplication operations. Based on this paradigm, we further proposed a highly parallel array structure to serve for ternary neural networks (TNNs). Our results demonstrate the advantage of our design in power consumption compared with CPU, GPU and other state-of-the-art works.

Original languageEnglish
Title of host publicationProceedings of the 2021 Design, Automation and Test in Europe, DATE 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1865-1870
Number of pages6
ISBN (Electronic)9783981926354
DOIs
StatePublished - 1 Feb 2021
Event2021 Design, Automation and Test in Europe Conference and Exhibition, DATE 2021 - Virtual, Online
Duration: 1 Feb 20215 Feb 2021

Publication series

NameProceedings -Design, Automation and Test in Europe, DATE
Volume2021-February
ISSN (Print)1530-1591

Conference

Conference2021 Design, Automation and Test in Europe Conference and Exhibition, DATE 2021
CityVirtual, Online
Period1/02/215/02/21

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • Stateful logic-in-memory
  • magnetic tunnel junction
  • spin orbit torque memory
  • ternary neural network

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