Spin transfer torque memories and logic gates

Mengxing Wang; Yu Zhang; Xueying Zhang; Jacques Olivier Klein; Claude Chappert; Weisheng Zhao

doi:10.1109/ICSICT.2014.7021262

Spin transfer torque memories and logic gates

Mengxing Wang
, Yu Zhang
, Xueying Zhang
, Jacques Olivier Klein
, Claude Chappert
, Weisheng Zhao^*

^*Corresponding author for this work

School of Integrated Circuit Science and Engineering

Beihang University
CNRS

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Traditional memory and logic gates are suffering the dilemma of power dissipation rising when the CMOS technology scales down to 40 nm node. By integrating the spin property of electrons, spintronics becomes an emerging technology to overcome definitively this bottleneck. In particular, the magnetic tunnel junction (MTJ) nanopillar combining with spin transfer torque (STT) switching mechanism has become a promising candidate to build novel low power integrated circuits thanks to its fast access speed, no-volatility and infinite endurance. This paper will describe the principle of STT and review its recent development for memories and logic gates. Related performance comparisons and physical challenges will be also outlined and discussed.

Original language	English
Title of host publication	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Editors	Jia Zhou, Ting-Ao Tang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479932962
DOIs	https://doi.org/10.1109/ICSICT.2014.7021262
State	Published - 23 Jan 2014
Event	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China Duration: 28 Oct 2014 → 31 Oct 2014

Publication series

Name	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Conference

Conference	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Country/Territory	China
City	Guilin
Period	28/10/14 → 31/10/14

Access to Document

10.1109/ICSICT.2014.7021262

Cite this

Wang, M., Zhang, Y., Zhang, X., Klein, J. O., Chappert, C., & Zhao, W. (2014). Spin transfer torque memories and logic gates. In J. Zhou, & T.-A. Tang (Eds.), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 Article 7021262 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2014.7021262

Wang, Mengxing ; Zhang, Yu ; Zhang, Xueying et al. / Spin transfer torque memories and logic gates. Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. editor / Jia Zhou ; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

@inproceedings{88830a684925411c9f78f40ff84ca134,

title = "Spin transfer torque memories and logic gates",

abstract = "Traditional memory and logic gates are suffering the dilemma of power dissipation rising when the CMOS technology scales down to 40 nm node. By integrating the spin property of electrons, spintronics becomes an emerging technology to overcome definitively this bottleneck. In particular, the magnetic tunnel junction (MTJ) nanopillar combining with spin transfer torque (STT) switching mechanism has become a promising candidate to build novel low power integrated circuits thanks to its fast access speed, no-volatility and infinite endurance. This paper will describe the principle of STT and review its recent development for memories and logic gates. Related performance comparisons and physical challenges will be also outlined and discussed.",

author = "Mengxing Wang and Yu Zhang and Xueying Zhang and Klein, \{Jacques Olivier\} and Claude Chappert and Weisheng Zhao",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 ; Conference date: 28-10-2014 Through 31-10-2014",

year = "2014",

month = jan,

day = "23",

doi = "10.1109/ICSICT.2014.7021262",

language = "英语",

series = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "Jia Zhou and Ting-Ao Tang",

booktitle = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",

address = "美国",

}

Wang, M, Zhang, Y, Zhang, X, Klein, JO, Chappert, C & Zhao, W 2014, Spin transfer torque memories and logic gates. in J Zhou & T-A Tang (eds), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014., 7021262, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Institute of Electrical and Electronics Engineers Inc., 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, 28/10/14. https://doi.org/10.1109/ICSICT.2014.7021262

Spin transfer torque memories and logic gates. / Wang, Mengxing; Zhang, Yu; Zhang, Xueying et al.
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. ed. / Jia Zhou; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. 7021262 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Spin transfer torque memories and logic gates

AU - Wang, Mengxing

AU - Zhang, Yu

AU - Zhang, Xueying

AU - Klein, Jacques Olivier

AU - Chappert, Claude

AU - Zhao, Weisheng

PY - 2014/1/23

Y1 - 2014/1/23

N2 - Traditional memory and logic gates are suffering the dilemma of power dissipation rising when the CMOS technology scales down to 40 nm node. By integrating the spin property of electrons, spintronics becomes an emerging technology to overcome definitively this bottleneck. In particular, the magnetic tunnel junction (MTJ) nanopillar combining with spin transfer torque (STT) switching mechanism has become a promising candidate to build novel low power integrated circuits thanks to its fast access speed, no-volatility and infinite endurance. This paper will describe the principle of STT and review its recent development for memories and logic gates. Related performance comparisons and physical challenges will be also outlined and discussed.

AB - Traditional memory and logic gates are suffering the dilemma of power dissipation rising when the CMOS technology scales down to 40 nm node. By integrating the spin property of electrons, spintronics becomes an emerging technology to overcome definitively this bottleneck. In particular, the magnetic tunnel junction (MTJ) nanopillar combining with spin transfer torque (STT) switching mechanism has become a promising candidate to build novel low power integrated circuits thanks to its fast access speed, no-volatility and infinite endurance. This paper will describe the principle of STT and review its recent development for memories and logic gates. Related performance comparisons and physical challenges will be also outlined and discussed.

UR - https://www.scopus.com/pages/publications/84946685434

U2 - 10.1109/ICSICT.2014.7021262

DO - 10.1109/ICSICT.2014.7021262

M3 - 会议稿件

AN - SCOPUS:84946685434

T3 - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

BT - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

A2 - Zhou, Jia

A2 - Tang, Ting-Ao

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Y2 - 28 October 2014 through 31 October 2014

ER -

Wang M, Zhang Y, Zhang X, Klein JO, Chappert C, Zhao W. Spin transfer torque memories and logic gates. In Zhou J, Tang TA, editors, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7021262. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). doi: 10.1109/ICSICT.2014.7021262

Spin transfer torque memories and logic gates

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this