TY - GEN
T1 - Spin orbit torques for ultra-low power computing
AU - Cao, Kaihua
AU - Zhao, Heng
AU - Wang, Mengxing
AU - Zhao, Weisheng
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2016/7/21
Y1 - 2016/7/21
N2 - In this paper, we review recent progress made in ultra-low power computing system with non-volatile magnetic random access memory (MRAM). Compared with the traditional Spin Transfer Torque (STT) based memories, Spin Orbit Torque (SOT) mechanism offers higher write speed, lower power consumption, and potentially infinite endurance. In particular, Spin-Hall assisted STT achieves a purely electrical operation in absence of an external magnetic field, and opens the door to real normally-off/instant-on computing with non-volatility at all levels of the memory hierarchy.
AB - In this paper, we review recent progress made in ultra-low power computing system with non-volatile magnetic random access memory (MRAM). Compared with the traditional Spin Transfer Torque (STT) based memories, Spin Orbit Torque (SOT) mechanism offers higher write speed, lower power consumption, and potentially infinite endurance. In particular, Spin-Hall assisted STT achieves a purely electrical operation in absence of an external magnetic field, and opens the door to real normally-off/instant-on computing with non-volatility at all levels of the memory hierarchy.
UR - https://www.scopus.com/pages/publications/84982262214
U2 - 10.1109/ASICON.2015.7516972
DO - 10.1109/ASICON.2015.7516972
M3 - 会议稿件
AN - SCOPUS:84982262214
T3 - Proceedings - 2015 IEEE 11th International Conference on ASIC, ASICON 2015
BT - Proceedings - 2015 IEEE 11th International Conference on ASIC, ASICON 2015
A2 - Ren, Junyan
A2 - Tang, Ting-Ao
A2 - Ye, Fan
A2 - Yu, Huihua
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 11th IEEE International Conference on Advanced Semiconductor Integrated Circuits (ASIC), ASICON 2015
Y2 - 3 November 2015 through 6 November 2015
ER -